Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting

Funato, Mitsuru; Kondou, T.; Hayashi, Keita; Nishiura, Shotaro; Ueda, Mitsuru; Kawakami, Yoichi; Narukawa, Yukio; Mukai, Takashi

doi:10.1143/apex.1.011106

Cited by 80 publications

(59 citation statements)

References 13 publications

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“…This fact may be used for the generation of white-light sources as proposed by Funato et al [40,41] without the need of luminescence converters as typically used nowadays.…”

Section: Neighboring Facetsmentioning

confidence: 99%

Three‐dimensional GaN for semipolar light emitters

Wunderer

Feneberg

Lipski

et al. 2010

Physica Status Solidi (b)

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Selective-area epitaxy is used to form three-dimensional (3D) GaN structures providing semipolar crystal facets. On full 2-in. sapphire wafers we demonstrate the realization of excellent semipolar material quality by introducing inverse GaN pyramids. When depositing InGaN quantum wells on such a surface, the specific geometry influences thickness and composition of the films and can be nicely modeled by gas phase diffusion processes. Various investigation methods are used to confirm the drastically reduced piezoelectric polarization on the semipolar planes. Complete electrically driven light-emitting diode test structures emitting in the blue and blue/green spectral regions show reasonable output powers in the milliwatt regime. Finally, first results of the integration of the 3D structures into a conventional laser design are presented

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“…This fact may be used for the generation of white-light sources as proposed by Funato et al [40,41] without the need of luminescence converters as typically used nowadays.…”

Section: Neighboring Facetsmentioning

confidence: 99%

Three‐dimensional GaN for semipolar light emitters

Wunderer

Feneberg

Lipski

et al. 2010

Physica Status Solidi (b)

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“…Indeed, the surface plasmon approach is also indicated to enhance the emission efficiency for multiple quantum wells (MQWs) [8], [9]. For the phosphor-free white LEDs, the laterally stacked structure of blue and green InGaN/GaN MQWs and monolithic polychromatic (LEDs) are demonstrated to grow white LEDs by multiple emission spectral and become the multicolor light-emitting sources [10], [11]. In addition, the ZnO current spreading is employed to compare the ITO due to lower sheet resistance and lower optical absorption [12].…”

Section: Introductionmentioning

confidence: 99%

The Influence of the Thermal Effect on CdSe/ZnS Quantum Dots in Light-Emitting Diodes

Chen

Shih

et al. 2012

J. Lightwave Technol.

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Abstract-This study investigates the effect of temperature on CdSe/ZnS quantum dots (QDs) in GaN-based light-emitting diodes (LEDs) using the phosphor conversion efficiency (PCE) and LED junction temperature. In our simulation, the blue chip and CdSe/ZnS QDs temperature are similar because of their minimal thickness. Furthermore, to verify the effect of temperature on CdSe/ZnS QDs, we use continuous wave and pulsed current sources to measure the relationship between the temperature and relative PCE. Higher junction temperatures are observed with greater CdSe/ZnS QD volume in LEDs. This is attributed to the thermal conduction and nonradiative energy between CdSe/ZnS QDs and blue chip. Therefore, if thermal management is improved, CdSe/ZnS QDs are expected to be used as color converting material in LEDs.Index Terms-Light-emitting diodes (LEDs), GaN, quantum dots (QDs), phosphor.

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“…For this reason, semipolar (11 " 22) facet GaN templates, which were selectively regrown on SiO 2 -masked [1 " 100]-oriented GaN stripes, were used for growth of (11 " 22) InGaN QW structures and LEDs. [14][15][16][17][18][19] These InGaN QW structures were mostly grown on the uncoalesced facet stripes and exhibited a broad emission peak. In this work, we report growth and characterization of a shallow-deep InGaN/GaN multiplequantum-well system on the semipolar (11 " 22) fully coalesced facet GaN for tunable dual-wavelength emission with two types of alternate quantum wells.…”

Section: Introductionmentioning

confidence: 99%

Shallow–Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar ( $$ 11\bar{2}2 $$ ) Facet GaN

Wang

Lü

Liu

et al. 2011

Journal of Elec Materi

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We report growth and characterization of a shallow-deep InGaN/GaN multiple-quantum-well (MQW) system for dual-wavelength emission grown on semipolar (11 " 22) facet GaN. Structural and optical properties of the InGaN multiple-quantum-well system were investigated by scanning electron microscopy (SEM), cross-sectional scanning transmission electron microscopy (XSTEM), photoluminescence (PL), photoluminescence excitation (PLE), and time-resolved photoluminescence (TRPL) measurements. Cross-sectional transmission electron microscopy (XTEM) revealed that the growth rate of the InGaN well layers on the (0001) flat top microfacet ($500 nm) was about six times as fast as on the (11 " 22) inclined facet, whereas the growth rate of GaN barrier layers on the (0001) flat top facet was roughly 4.5 times as large as that on the (11 " 22) facet. A room-temperature PL spectrum showed dual-wavelength light emission of the shallow-deep InGaN multiple-quantum-well system situated at 2.720 eV (455 nm) and 2.967 eV (418 nm). The Stokes shifts between the two PL peaks and the two ''effective bandgaps'' were $260 meV in energy for the deep quantum wells and $233 meV for the shallow quantum wells. The TRPL decay demonstrated the short radiative recombination lifetime on the order of several nanoseconds in the InGaN MQW system. Realization of the shallow-deep InGaN multiple-quantum-well system with emission wavelength controllability would be useful to achieve III-nitride-based multicolor light-emitting devices for displays.

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Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting

Cited by 80 publications

References 13 publications

Three‐dimensional GaN for semipolar light emitters

Three‐dimensional GaN for semipolar light emitters

The Influence of the Thermal Effect on CdSe/ZnS Quantum Dots in Light-Emitting Diodes

Shallow–Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar ( $$ 11\bar{2}2 $$ ) Facet GaN

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