Three‐dimensional GaN for semipolar light emitters

Wunderer, Thomas; Feneberg, Martin; Lipski, Frank; Wang, J.; Leute, Robert A. R.; Schwaiger, Stephan; Thonke, Klaus; Chuvilin, Andrey; Kaiser, Ute; Metzner, Sebastian; Bertram, F.; Christen, J.; Beirne, G. J.; Jetter, Michael; Michler, Peter; Schade, Lukas; Vierheilig, Clemens; Schwarz, Uli; Dräger, A. D.; Hangleiter, A.; Scholz, F.

doi:10.1002/pssb.201046352

Cited by 66 publications

(77 citation statements)

References 57 publications

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“…But, as the quantization cannot exclusively explain the huge spectral shift of 1 eV along the facet, the Inincorporation has to change also. Optical simulations based on the emission energies and lifetimes from CL suggest an In-content of 20% at the ridge and below 10% at the center [13]. Additionally, high In-containing ternary QWs show statistically stronger fluctuations in indium incorporation as well as in well thickness both giving rise to strong localization of carriers in the local band profile.…”

Section: Samplesmentioning

confidence: 94%

“…Although the huge spontaneous and piezoelectric polarization of the wurtzite nitride system is drastically reduced on the semipolar plane, the internal electric fields still have consequences on the SQW luminescence via the QCSE reducing the recombination probability and hence increasing the carrier lifetimes for higher indium contents and thicker wells. Indeed, TEM provides a relatively thick QW of about 5 nm at the ridge which gets thinner towards the center reaching a width of less than 3 nm [13]. But, as the quantization cannot exclusively explain the huge spectral shift of 1 eV along the facet, the Inincorporation has to change also.…”

Section: Samplesmentioning

confidence: 98%

“…To understand the local maximum of FWHM a dramatic impact of gas phase diffusion and surface migration into the complex cone-like 3D structure of inverse pyramids affecting the local growth conditions have to be taken into account. For a detailed analysis of these structures using various characterization techniques and simulation see Wunderer et al [13]. Time-resolved CL measurements have been carried out giving local transients of the SQW luminescence of inverse pyramids.…”

Section: Samplesmentioning

confidence: 99%

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Spectrally and time‐resolved cathodoluminescence microscopy of semipolar InGaN SQW on (11$\overline {2} $2) and (10$\overline {1} $1) pyramid facets

Metzner

Bertram

Karbaum

et al. 2011

Physica Status Solidi (b)

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67 11130Semipolar InGaN/GaN single quantum wells (SQWs) grown on {1122} planes of an inverted pyramid surface and {1011} facets of single self assembled pyramids have been studied by spatially, spectrally, and time-resolved cathodoluminescence (CL) microscopy. Mappings of local spectra and local transients provide the distribution of spectral and time-resolved luminescence properties by peak wavelength images, time delayed CL images (TDCLIs), and initial lifetime maps. The SQW on inverse pyramids exhibit strong local differences in recombination kinetics -two orders of magnitude change in initial lifetime -correlated with a giant shift in emission energy of $1 eV along a facet. For single pyramids a migration process of indium adatoms from the upper facet to the edges leads to an emission of longer wavelengths at the edges and shorter wavelengths at the upper facet with respect to the base.

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Section: Samplesmentioning

confidence: 94%

Section: Samplesmentioning

confidence: 98%

Section: Samplesmentioning

confidence: 99%

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Spectrally and time‐resolved cathodoluminescence microscopy of semipolar InGaN SQW on (11$\overline {2} $2) and (10$\overline {1} $1) pyramid facets

Metzner

Bertram

Karbaum

et al. 2011

Physica Status Solidi (b)

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“…While vertical (non-polar) side facets can be realized, too, they are not focus of this work. A review of 3D growth can be found in [10]. For direct electrical operation of LEDs, flat sample surfaces are far more convenient and compatible with conventional processing.…”

Section: Selective Growth For Semipolar Quantum Wellsmentioning

confidence: 99%

“…Thus, it can be realized on cheap and large substrates. High crystal quality has already been achieved [10] and LEDs with semipolar QWs based on m sized 3D structures have been reported [11][12][13][14][15]. Yet, these 3D topologies require specially adapted device processing.…”

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confidence: 99%

Blue to true green LEDs with semipolar quantum wells based on GaN nanostripes

Leute

Wang

Meisch

et al. 2015

physica status solidi c

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Recent advances of the performance of GaN based devices with semipolar quantum wells have been realized homoepitaxially on pseudo bulk substrates which are typically small in size and high in cost. These limitations fuel the search for cheap and large area alternatives. Heteroepitaxial growth on sapphire substrates is well established with excellent results for polar GaN structures ‐ the growth of semipolar gallium nitride on sapphire, however, presents unique challenges. In order to profit from our expertise in c‐plane samples, our semipolar gallium nitride growth experiments are based on growth in c‐direction. Using selective area epitaxy (SAE) on c‐oriented templates, we can grow 3D structures with semipolar side facets. These structures are typically several μm in size which constitutes further challenges for device processing. Reducing the size of the structures to a sub‐μm scale, we are able to bury our semipolar QWs within planar layers resulting in flat samples with c‐plane surfaces. In this contribution, we present our results concerning the structural quality and spectral properties of quantum wells emitting in the blue and green spectral range as well as light emitting diodes. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Mg doping of 3D semipolar InGaN/GaN-based light emitting diodes

Wang

Gao

Alam

et al. 2014

Phys. Status Solidi A

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The effects of different Mg doping concentrations in the main p‐GaN layer and the p‐GaN capping layer on the electroluminescence (EL) properties of three‐dimensional semipolar InGaN/GaN light emitting diode structures grown on GaN stripes with triangular cross‐section were investigated. Secondary ion mass spectrometry analysis revealed the Mg concentration of the 3D semipolar p‐GaN, indicating a higher Mg incorporation efficiency on the {101¯1} facet as compared to the {112¯2} facet. The EL output power is low with a too low Mg concentration of 3 × 1019 cm−3, probably due to the inferior hole injection efficiency and stays almost constant with the Mg concentration ranging from 4 × 1019 cm−3 until 1.3 × 1020 cm−3 for the 3D LEDs with the {101¯1} facet. Heavy Mg doping in the p‐GaN capping layer is required to achieve good ohmic contact performance.

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Three‐dimensional GaN for semipolar light emitters

Cited by 66 publications

References 57 publications

Spectrally and time‐resolved cathodoluminescence microscopy of semipolar InGaN SQW on (11$\overline {2} $2) and (10$\overline {1} $1) pyramid facets

Spectrally and time‐resolved cathodoluminescence microscopy of semipolar InGaN SQW on (11$\overline {2} $2) and (10$\overline {1} $1) pyramid facets

Blue to true green LEDs with semipolar quantum wells based on GaN nanostripes

Mg doping of 3D semipolar InGaN/GaN-based light emitting diodes

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