2009
DOI: 10.1109/jmems.2009.2034340
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Monolithic Integration of Silicon Nanowires With a Microgripper

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Cited by 12 publications
(14 citation statements)
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“…2009 799-807 Monolithic Integration of Silicon Nanowires With a Microgripper. Ozsun, O., +, JMEMS Dec. 20091335-1344 Monolithic Integration of Silicon Nanowires With a Microgripper. Ozsun, O., +, JMEMS Dec. 2009 …”
Section: Nanotechnologymentioning
confidence: 99%
See 1 more Smart Citation
“…2009 799-807 Monolithic Integration of Silicon Nanowires With a Microgripper. Ozsun, O., +, JMEMS Dec. 20091335-1344 Monolithic Integration of Silicon Nanowires With a Microgripper. Ozsun, O., +, JMEMS Dec. 2009 …”
Section: Nanotechnologymentioning
confidence: 99%
“…De Volder, M., +, JMEMS Oct. 20091100-1104 Monolithic Integration of Silicon Nanowires With a Microgripper. Ozsun, O., +, JMEMS Dec. 20091335-1344 Moving Polymer Waveguides and Latching Actuator for 2 2 2 MEMS Optical Switch. Liu, H.-B., +, JMEMS June 2009 …”
mentioning
confidence: 99%
“…Another method uses time multiplexed alternating process (TMAP) etching, also known as deep reactive ion etching (DRIE) or Bosch process in combination with high temperature oxidation to form vertical stacks of SiNWs. Several groups, including the authors, have reported on variations of the TMAP-DRIE process for the fabrication of vertically stacked SiNWs arrays for micro-electro-mechanical-systems MEMS [12] and FET devices [13,14]. Nevertheless, the SiNW fabrication typically relies on thermal oxidation and/or hydrogen annealing techniques [7,8,13,14] which increase the temperature budget.…”
Section: Introductionmentioning
confidence: 99%
“…Standard techniques for the preparation of silicon wires include top-down and/or bottom-up approaches [19][20][21]. These methods may include several steps, the use of specialized equipment and in some cases the application of high temperatures and/or pressures [22,23].…”
Section: Introductionmentioning
confidence: 99%