Monolithic Integration of SiC Power BJT and Small-Signal BJTs for Power ICs

Liang, Shiwei; Wang, Daming; Deng, Linfeng; Fang, Fang; Shen, Z. John

doi:10.1109/jestpe.2019.2923671

Cited by 6 publications

(6 citation statements)

References 29 publications

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“…8 is represented by the simulations, while Fig. 19 presents the results of the measurements and simulations of the case of two paralleled SiC BJTs, where the current mismatch, albeit at smaller value due to the absence of the turn-OFF delay [33], [34], is represented by both the measurements and simulations.…”

Section: Experimental Set-upmentioning

confidence: 99%

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

Shen

Jahdi

Yang

et al. 2022

IEEE Open J. Ind. Electron. Soc.

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The 4H-SiC vertical NPN BJTs are attractive power devices with potentials to be used as high power switching devices with high voltage ratings in range of 1.7 kV and high operating temperatures. In this paper, the advantages of the 4H-SiC NPN BJTs in terms of switching transients and current gain over their silicon counterparts is illustrated by means of extensive experimental measurements and modelling, including investigation of high level injection, as a common phenomenon in bipolar devices that influences the switching rates and DC current gain. The two device types have been tested at 800 V with maximum temperature of 175°C and maximum collector current of 8 A. The turn-ON and turn-OFF transition in Silicon BJT is seen to be much slower than that of the SiC BJT while the transient duration will increase with increasing temperature and decreases with larger collector currents. The common-emitter current gain of SiC BJT is also found to be much higher than silicon counterparts, increasing with temperature in low injection levels but decreasing in higher injection levels in both devices. The rate of increase of current gain slows down toward stability as the collector current increases, known as the high-level injection. Current sharing imbalance among parallel connected devices is also investigated, which are shown to be evidently dependant on temperature and base resistance in Silicon BJT, while the current collapse in also seen in SiC BJT at high injection levels with high base resistance. The turn-OFF delay is seen to be temperature dependant in single and paralleled Silicon BJTs while almost non-existent in SiC device.

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Section: Experimental Set-upmentioning

confidence: 99%

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

Shen

Jahdi

Yang

et al. 2022

IEEE Open J. Ind. Electron. Soc.

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“…However, the complexity of the structure and process of HEMT and MOSFET devices leads to degradation of the integrated device performance. 25 In horizontally structured integrated devices, the active region is small and the parasitic effect of metal leads is connected in a series of devices. For vertically structured integrated devices, the growth of p-type and n-type GaN interacts with each other due to the difference in growth temperature, making epitaxial growth of vertically structured devices difficult.…”

Section: Introductionmentioning

confidence: 99%

“…It also provides a cost-effective method and greatly simplifies the fabrication process for monolithic integration. However, the complexity of the structure and process of HEMT and MOSFET devices leads to degradation of the integrated device performance . In horizontally structured integrated devices, the active region is small and the parasitic effect of metal leads is connected in a series of devices.…”

Section: Introductionmentioning

confidence: 99%

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Su,

Wang,

Zou

et al. 2024

ACS Photonics

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A vertical integration of indium gallium nitride/ gallium nitride (InGaN/GaN)-based microlight-emitting diode (μLED) and GaN ultraviolet bipolar junction transistor (BJT) phototransistor (UVPT), based on the same GaN material and process platform (UVPT-μLED), was proposed. The integrated device is a novel integrated device with light-emitting, detecting, sensing, driving and regulating functions. It can be used as a receiver and transmitter. The light-emission effect of the μLED on UVPT can be regulated by changing the power of an external light. Optical-electrical-optical conversion was conducted with Silvaco TCAD software. Electro-optic modulation characteristics and optical power amplification were attained through a Silvaco TCAD simulation. By optimization of the size and concentration of the device epitaxial, the current gain of the optimized device reaches a maximum of 240. The UVPT-μLED device shows a strong response to small-power light and a stable response to high-power light. The UVPT-μLED chip with a high switching ratio was successfully prepared and used to verify the feasibility of the UVPT-μLED device. The proposed monolithic integrated device not only can be used for traditional displays but also shows great potential in intelligent displays, such as human−computer interactive systems, on-chip optical interconnects, photonic chips and visible-light communications.

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“…Modeling RF devices serves a dual purpose: it enhances the success rate of circuit design and facilitates the analysis of electromagnetic compatibility characteristics within the RF system. This process is immensely beneficial for subsequent improvements in system stability [10][11][12][13][14]. The traditional approach to modeling integrated circuits involves testing the chip's internal parameters using a vector network analyzer.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Direct Extraction of Parameters for GaAs HBT Small- Signal Equivalent Circuit

Jianyu,

Mengdi,

Yifei

et al. 2024

IEICE Electron. Express

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Due to the low noise and high linearity characteristics of GaAs Hetero-junction Bipolar Transistors (HBTs), Low Noise Amplifiers (LNAs) are widely used in aerospace, communication, computer, and other fields. Extracting device model parameters is of great significance for subsequent research on the electromagnetic compatibility characteristics of such devices. In this paper, based on the small signal model, the model parameters of the amplifier are extracted by combining the I-V characteristics of the amplifier under different external voltage conditions. The linear model parameters are extracted using a fitting analysis method to obtain the Pspice circuit model of the GaAs amplifier under normal operating conditions. The simulation results align closely with the measured results. Compared with traditional modeling methods, this approach effectively resolves the issue of being unable to measure parameters due to chip packaging. This method holds substantial significance in extracting circuit model parameters and conducting in-depth research on circuit electromagnetic compatibility characteristics of this device.

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Monolithic Integration of SiC Power BJT and Small-Signal BJTs for Power ICs

Cited by 6 publications

References 29 publications

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Modeling and Direct Extraction of Parameters for GaAs HBT Small- Signal Equivalent Circuit

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