2024
DOI: 10.1587/elex.21.20230634
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Modeling and Direct Extraction of Parameters for GaAs HBT Small- Signal Equivalent Circuit

Wu Jianyu,
Xu Mengdi,
Zheng Yifei
et al.

Abstract: Due to the low noise and high linearity characteristics of GaAs Hetero-junction Bipolar Transistors (HBTs), Low Noise Amplifiers (LNAs) are widely used in aerospace, communication, computer, and other fields. Extracting device model parameters is of great significance for subsequent research on the electromagnetic compatibility characteristics of such devices. In this paper, based on the small signal model, the model parameters of the amplifier are extracted by combining the I-V characteristics of the amplifie… Show more

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