Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers

Groenert, M.; Leitz, Christopher; Pitera, Arthur J.; Yang, V. K.; Lee, Harry; Ram, Rajeev J.; Fitzgerald, Eugene A.

doi:10.1063/1.1525865

Cited by 240 publications

(150 citation statements)

References 24 publications

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“…A monolithic integrated laser source on Si has been considered a "holy-grail", since the indirect band gap semiconductors, Si and Ge, are usually regarded unsuitable for laser diodes due to their inefficient radiative recombination. Extensive research has been conducted on porous Si [15], Si nanocrystals [16], ultrathin Si quantum wells (QWs) [17], Si and SiGe nanostructures [18], GeSn [19], Si Raman lasers [20], and III-V lasers grown on [21] or bonded to Si [22]. While stimulated emission from ultrathin Si QWs has been observed, the gain is not enough to overcome losses and enable lasing [23].…”

Section: Introductionmentioning

confidence: 99%

Heterogeneously grown tunable group-IV laser on silicon

et al. 2016

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Tunable tensile-strained germanium (epsilon-Ge) thin films on GaAs and heterogeneously integrated on silicon (Si) have been demonstrated using graded III-V buffer architectures grown by molecular beam epitaxy (MBE). epsilon-Ge epilayers with tunable strain from 0% to 1.95% on GaAs and 0% to 1.11% on Si were realized utilizing MBE. The detailed structural, morphological, band alignment and optical properties of these highly tensile-strained Ge materials were characterized to establish a pathway for wavelength-tunable laser emission from 1.55 μm to 2.1 μm. High-resolution X-ray analysis confirmed pseudomorphic epsilon-Ge epitaxy in which the amount of strain varied linearly as a function of indium alloy composition in the InxGa1-xAs buffer. Cross-sectional transmission electron microscopic analysis demonstrated a sharp heterointerface between the epsilon-Ge and the InxGa1-xAs layer and confirmed the strain state of the epsilon-Ge epilayer. Lowtemperature micro-photoluminescence measurements confirmed both direct and indirect bandgap radiative recombination between the Γ and L valleys of Ge to the light-hole valence band, with L-lh bandgaps of 0.68 eV and 0.65 eV demonstrated for the 0.82% and 1.11% epsilon-Ge on Si, respectively. The highly epsilon-Ge exhibited a direct bandgap, and wavelength-tunable emission was observed for all samples on both GaAs and Si. Successful heterogeneous integration of tunable epsilon-Ge quantum wells on Si paves the way for the implementation of monolithic heterogeneous devices on Si

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Section: Introductionmentioning

confidence: 99%

Heterogeneously grown tunable group-IV laser on silicon

et al. 2016

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“…In an attempt to resolve challenge (i), germanium (Ge), which has a lattice constant perfectly matched to GaAs (0.07% at 300 K) and superior electron and hole mobility compared with Si, can be grown on Si to provide a buffer layer for integration and fabrication of GaAsbased devices on a Si substrate. [12][13][14][15] Since Ge and GaAs have diamond and zincblende structure, respectively, two possible sublattice allocations are possible for the GaAs layer, although they have exactly the same crystal structure. In one allocation, Ga atoms occupy the face-centered cubic (FCC) sublattice containing the cubic corners, whereas in the other allocation, As atoms occupy this FCC sublattice.…”

Section: Introductionmentioning

confidence: 99%

Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

Lee

Tan

Jandl

et al. 2013

Journal of Elec Materi

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The quality of germanium (Ge) epitaxial films grown directly on silicon (Si) (001) with 0°and 6°offcut orientation using a reduced-pressure chemical vapor deposition system is studied and compared. Ge film grown on Si (001) with 6°offcut presents $65% higher threading dislocation density and higher root-mean-square (RMS) surface roughness (1.92 nm versus 0.98 nm) than Ge film grown on Si (001) with 0°offcut. Plan-view transmission electron microscopy also reveals that threading dislocations are more severe (in terms of contrast and density) for the 6°offcut. In addition, both high-resolution x-ray diffraction and Raman spectroscopy analyses show that the Ge epilayer on 6°offcut wafer presents higher tensile strain. The poorer quality of the Ge film on Si (001) with 6°offcut is a result of an imbalance in Burgers vectors that favors dislocation nucleation over annihilation.

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“…However, the active region and injection path can be isolated from the defects through precise strain management, which causes the bending and subsequent annihilation of threading dislocations. Several approaches have been demonstrated, including III-Sb buffer layers [23], strained Stranski-Krastanow quantum dot layers [24], graded Si-Ge buffer layers [25] and strained super-lattices (SSL) [26].…”

Section: Review Of Silicon Compatible Lasersmentioning

confidence: 99%

Physical Properties and Characteristics of III-V Lasers on Silicon

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Marko

Hossain

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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Abstract-The development of laser technology based on silicon continues to be of key importance for the advancement of electronic-photonic integration offering the potential for high data rates and reduced energy consumption. Progress was initially hindered due to the inherent indirect band gap of silicon. However, there has been considerable progress in developing ways of incorporating high gain III-V based direct band gap materials onto silicon, bringing about the advantages of both materials. In this paper, we introduce the need for lasers on silicon and review some of the main approaches for the integration of III-V active regions, including direct epitaxial growth, hybrid integration, defect blocking layers and quantum dots. We then discuss the roles of different carrier recombination processes on the performance of devices formed using both wafer fusion and direct epitaxial approaches.

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Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers

Cited by 240 publications

References 24 publications

Heterogeneously grown tunable group-IV laser on silicon

Heterogeneously grown tunable group-IV laser on silicon

Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

Physical Properties and Characteristics of III-V Lasers on Silicon

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