2003
DOI: 10.1117/12.479563
|View full text |Cite
|
Sign up to set email alerts
|

Monolithic integration of RF-MEMS and semiconductor devices for the K-band

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
1
0

Year Published

2005
2005
2010
2010

Publication Types

Select...
2
2

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(1 citation statement)
references
References 4 publications
0
1
0
Order By: Relevance
“…Commonly used configurations of suspended MEMS transmission-line structures: (a) microshield structure with two bonded wafers and backside through-wafer etching [7]; (b) single-wafer frontside-etched microshield structure with vias on a thin membrane [8]; (c) single-wafer frontside-etched microshield structure without membrane; (d) suspended structure with/without dielectric support posts [21]; (e) fixed-fixed beam switch; and (f) down-state cantilever beam switch. and there is a wide variety of other RF microelectromechanical systems (MEMS) devices incorporating their structures, including LC passives [10], [11], filters [12], [13], power dividers [14], [15], mixers [16], [17], varactors [18], [19], couplers [20], [21], phase shifters [22], [23], resonators [24], [25], diplexers [24], oscillators [1], [24], parametric amplifiers [26], impedance tuners [27], [28], frequency selective surfaces [29], [30], and antennas [31], [32]. They can also take the form of moving beams to construct inline and shunt switches [22], [33], [34] as illustrated in Fig.…”
mentioning
confidence: 99%
“…Commonly used configurations of suspended MEMS transmission-line structures: (a) microshield structure with two bonded wafers and backside through-wafer etching [7]; (b) single-wafer frontside-etched microshield structure with vias on a thin membrane [8]; (c) single-wafer frontside-etched microshield structure without membrane; (d) suspended structure with/without dielectric support posts [21]; (e) fixed-fixed beam switch; and (f) down-state cantilever beam switch. and there is a wide variety of other RF microelectromechanical systems (MEMS) devices incorporating their structures, including LC passives [10], [11], filters [12], [13], power dividers [14], [15], mixers [16], [17], varactors [18], [19], couplers [20], [21], phase shifters [22], [23], resonators [24], [25], diplexers [24], oscillators [1], [24], parametric amplifiers [26], impedance tuners [27], [28], frequency selective surfaces [29], [30], and antennas [31], [32]. They can also take the form of moving beams to construct inline and shunt switches [22], [33], [34] as illustrated in Fig.…”
mentioning
confidence: 99%