Monolithic integration of light emitting diodes, detectors and optical fibers on a silicon wafer: a CMOS compatible optical sensor

Chang

Applied Physics Letters

et al. 2000

We report the visible electroluminescence at room temperature from metal-oxide-silicon tunneling diodes. As biased in the Fowler-Nordheim regime, the electrons tunnel from the gate electrode through the ultrathin oxide and reach the Si anode with sufficiently high energy. The hot electrons cause the impact ionization, and generate the secondary hot electrons and hot holes in Si substrates. The visible light comes from the radiative recombination between the secondary hot electrons and hot holes, and the hot carrier recombination model can fit the visible electroluminescence spectra.

mentioning

confidence: 99%

Hot carrier recombination model of visible electroluminescence from metal–oxide–silicon tunneling diodes

Chang

Applied Physics Letters

et al. 2000

Optoelectronic Devices and Integration II

“…It is noted the light emitting peak wavelength of Si LED is at 1130nm ,while the absorption spectrum of most Si PD is within 200nm-1500nm with sensitive region at about 600nm-900nm .So to make sure that the Si PD can detect the light emitted by itself ,we must make the peak of absorption spectrum near the peak of emission spectrum, or absorption spectrum overlap the peak of emitting spectrum as much as possible .The overlapping of these two spectra is called Collection Quantum Efficiency(CQE),the key issue of designing device as both LED and PD is to improve its CQE. One of the important merit of this Si LED-PD is that it not only emits (or absorbs) light from top strongly, but also from the side for its "U" shaped interdigital structure .so it is easy to integrate this device with planar optical waveguide .In recent years ,several integrated structure of Si-based OEIC has been reported [12,13] ,in some of which field oxide is novelly taken as the core of waveguide .but in typical Si process the refractive index of Si ,SiO2,SiN,Poly-Si is n Si =3.5 ，n SiO2 =1.45,n SiN =1.8,n Poly =3.45 respectively, so SiO 2 as core and other material as coating of waveguide can hardly satisfy the requirement of total reflection needed to be met in waveguide . the loss in such waveguide is relatively high .…”

Section: Simulation Of Si-based Pdmentioning

confidence: 98%

The design and simulation of same Si-based device used as both LED and PD

Wang

Niu

et al. 2007

A kind of new light emitting diode (LED) based on Si p-n junction forward injection mechanism completely compatible with standard Si-CMOS technology is designed and analyzed, which has higher efficiency than LED based on Si pn junction in reverse bias breakdown mode .At same time according to reversibility of optoelectronic conversion, the same Si-LED can be used as a photodetector (PD).The photoelectric characteristics of this device as both LED and PD are simulated by the commercial software SILVACO. This device is expected to have wide application in next generation optoelectronic integrated circuit (OEIC).Keywords: all-Si OEIC ,Si-based light emitting diode, pn junction forward injection ,Si-based photodetector 1．INTRODUCTIONDriven by fiber telecommunications and the maturing silicon technology, it is expected to incorporate photon into highly developed Si-based integrated circuit to form optoelectronic integrated circuit (OEIC), thus can considerably reduce the critical dimension and increase storage and transmission capacities of current telecommunications. However, even if silicon has done a good job in the microelectronics , it doesn't have excellent optical characteristics compared with III-V compound materials such as GaAs , InP and so on ,due to its indirect band gap and high absorption coefficient for light with wavelength below 850nm. So to realize all silicon OEIC(all-Si OEIC), the critical issue is how to improve the electron-to-photon and photon-to-electron conversion efficiency of silicon to integrate the Si-based optical circuit and electrical circuit into a monolithic chip. In recent years, great efforts have been made to make silicon shed light such as porous silicon light emitting [1] ,Er-doped silicon light emitting [2] , (Si m Ge n )p [3] or Si/SiO 2 superlattice [4] light emitting and *kevin_0205@sina.com;phone 86

“…T HE INTEGRATION of light emitters and detectors in a CMOS compatible process makes the optical interconnects feasible for ULSI circuits [1]. The same MOS tunneling structures used in this study for both light emitters and detectors allow a duplex transmission of optical interconnects [2].…”

Section: Introductionmentioning

confidence: 98%

A novel photodetector using MOS tunneling structures

IEEE Electron Device Lett.

Lee

et al. 2000

A metal/oxide/p-Si structure with the ultrathin oxide is utilized as a photodetector. At positive gate bias, the dark current of the photodetector is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000 C) of the gate oxide can reduce the dark current to a level as low as 3 nA/cm 2 . As biased in the inversion layer, the tunneling diode works in the deep depletion region with the soft pinning of oxide voltage, instead of the pinning of surface potential, very different from the conventional MOS diode with thick oxide.Index Terms-MOS tunneling diode, photodetector, rapid thermal oxide.