A novel photodetector using MOS tunneling structures

Liu, C.W.; Liu, W.T.; Lee, M.H.; Kuo, Wen-Chi; Hsu, B.-C.

doi:10.1109/55.843159

Cited by 74 publications

(37 citation statements)

References 6 publications

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“…Thus, the radiative recombination occurs deeply away from the Ge surface. Moreover, the roughness scattering at Ge/ SiO 2 interface can provide the extra momentum in the indirect recombination 15,16 and can significantly enhance the indirect transition rate. 4͒.…”

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confidence: 99%

Influence of defects and interface on radiative transition of Ge

Jan

Chen

Lee

et al. 2011

Applied Physics Letters

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The influences of defects and surface roughness on the indirect bandgap radiative transition of Ge were studied. Bulk Ge has 15 times the integrated intensity of photoluminescence of Ge-on-Si. However, for Ge-on-Si sample, the direct transition related photoluminescence intensity is higher than the indirect transition related one. We affirm that the defects in the Ge-on-Si are responsible for the weak indirect transition and relatively strong direct transition. The scattering of electrons by roughness at Ge/oxide interface can provide extra momentum of the indirect band transition of Ge, and thus enhance the indirect radiative transition.

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confidence: 99%

Influence of defects and interface on radiative transition of Ge

Jan

Chen

Lee

et al. 2011

Applied Physics Letters

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“…4(a), the maximum value of P s is 18706.59 under the bias voltage of 5 V, which is larger than before [11,15]. Furthermore, it was discovered that the device could be driven under small bias voltage with the elongated edge length and the photocurrent is comparatively independent of bias voltage as shown in Fig.…”

Section: Resultsmentioning

confidence: 88%

“…4(b) shows the photocurrent corresponding to illumination irradiance measured under bias voltage of 5 V. Fig. 4(b) is plotted on a logarithmic scale, and the slope κ of curves in this figure is defined as the ratio of photo-generated current increment to illumination irradiance as expressed as [15] …”

Section: Resultsmentioning

confidence: 99%

Photo-Sensitivity Enhancement of ${\rm HfO}_{2}$-Based MOS Photodiode With Specific Perimeter Dependency Due to Edge Fringing Field Effect

Yang

Hwu

2012

IEEE Sensors J.

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On account of edge fringing field effect, deep depletion would happen and charge collection would be largely enhanced at edge. Hafnia (HfO 2 )/SiO 2 -stacked metal-oxidesemiconductor photodiode is proposed and perceived by analyzing the photocurrents with various elongated edge perimeter. This structure of HfO 2 /SiO 2 exhibits an enhanced edge charge collection characteristic that could be applied to generate the considerable photocurrent in magnitude. Higher tunneling probability in the deeper depletion region at edge makes explicitly larger portion of current, pass through this area due to edge fringing field effect. Under illumination, photo-excited charge collection would be largely enhanced at the edge. Moreover, responsivity R and photosensitivity Ps, which were evaluative figures for photo-electrical applications, were examined and discussed. The slope κ of photo-current versus irradiance curves reaches to 1.59 which is feasible for image sensor. These results are attributed to the enhanced edge-deep depletion absorption of light due to edge-fringing field effect.Index Terms-Deep depletion, enhanced fringing field effect, metal-oxide-semiconductor photodiode, specific perimeter dependency.

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“…The inversion bias can cause the deep depletion region to collect the photogenerated carriers. 18 Note that the fiber is pointed to the edge of the gate electrode. The minority carriers are generated in the deep depletion region, tunnel from the active absorption layer to the Al gate electrode via the trap-assisted tunneling of the LPD oxide, and form the photocurrent.…”

Section: Resultsmentioning

confidence: 99%

Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors

Cheng

Liao

Yeh

et al. 2008

Journal of Applied Physics

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Both Ge light-emitting diodes and photodetectors are demonstrated by using the same metal-insulator-semiconductor (MIS) tunneling structure. A Ge MIS tunneling diode biased at the accumulation region is used as a light-emitting device and a Ge MIS tunneling diode biased at the inversion region is used as a photodetector. The ultrathin gate oxide film used in the MIS tunneling diode was grown by liquid phase deposition at 50 °C to lower the thermal budget. A Ge light-emitting diode has a higher quantum efficiency than a similar Si device (at least one order of magnitude stronger) due to the higher radiative recombination coefficient. With the detection of the Ge MIS photodetector, the data communication in free space is reported and demonstrated for the first time.

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A novel photodetector using MOS tunneling structures

Cited by 74 publications

References 6 publications

Influence of defects and interface on radiative transition of Ge

Influence of defects and interface on radiative transition of Ge

Photo-Sensitivity Enhancement of ${\rm HfO}_{2}$-Based MOS Photodiode With Specific Perimeter Dependency Due to Edge Fringing Field Effect

Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors

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