A GaN NW UV photodetector with superior wavelength selectivity exhibits significant enhancement of photocurrent, responsivity, EQE and sensitivity after Pt NPs decoration due to the strong absorption and scattering of incident light and the improvement of interfacial charge separation.
Flexible
optoelectronics is an emerging research field that has
attracted a great deal of interest in recent years due to the special
functions and potential applications of these devices in flexible
image sensors, optical computing, energy conversion devices, the Internet
of Things, and other technologies. Here, we examine the high-performance
ultraviolet (UV) photodetectors using AZO/ZnO nanorods/PVK/PEDOT:PSS
heterostructures integrated on human hair. Due to the precise interfacial
energy-level alignment among all layers and superior mechanical characteristics
of human hair, the as-obtained photodetector shows a fast response
time, high photoresponsivity, and excellent flexibility. According
to integrate 7 heterostructures as 7 display pixels, the flexible
UV-image sensor has superior device performance and outstanding flexibility
and can produce vivid and accurate images of Arabic numerals from
0 to 9. Different combinations of the two heterostructures can also
be used to achieve flexible photon-triggered logic functions, including
AND, OR, and NAND gates. Our findings indicate the possibility of
using human hair as a fiber-shaped flexible substrate and will allow
the use of hair-based hierarchical heterostructures as building blocks
to create exciting opportunities for next-generation high-performance,
multifunctional, low-cost, and flexible optoelectronic devices.
Crystalline GaN nanosheets hold great challenge in growth and promising application in optoelectronic nanodevices. In this work, we reported an accessible template approach toward the rational synthesis of GaN nanosheets through the nitridation of metastable γ-GaO nanosheets synthesized from a hydrothermal reaction. The cubic γ-GaO nanosheets with smooth surface and decent crystallinity can be directly converted into hexagonal GaN nanosheets with similar morphology framework and comparable crystal quality in NH at 850 °C. UV-vis spectrum measurement reveals that the GaN nanosheets show a band gap of 3.30 eV with strong visible absorption in the range of 370-500 nm. The template synthetic strategy proposed in this work will open up more opportunities for the achievement of a variety of sheetlike nanostructures that can not be obtained through conventional routines and will undoubtedly further promote the fundamental research of newly emerging sheetlike nanostructures and nanotechnology.
The multi-wavelength tailoring of ZnGa2O4 nanosheets has been achieved via a defect engineering approach. Controlling the distortion of [GaO6] octahedron and the formation of [GaO4] tetrahedron and oxygen vacancy in ZnGa2O4 lattice can achieve the simultaneous emissions of ultraviolet/blue, green and red wavelengths.
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