Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology

Isukapati, Sundar Babu; Zhang, Hua; Liu, Tianshi; Ashik, Emran; Lee, Bongmook; Morgan, Adam J.; Sung, Woongje; Fayed, Ayman; Agarwal, Anant

doi:10.23919/ispsd50666.2021.9452235

Cited by 22 publications

(4 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Owing to the wide bandgap of SiC, the sensor is inherently “solar blind” and the sensitive spectral bandwidth of the UV detector is much narrower than the Si-based UV detector, which makes this device attractive for flame detection, healthcare, etc. In addition, monolithic SiC power ICs, which consist of a high-voltage SiC power MOSFET and SiC CMOS logic circuits, have recently been demonstrated [ 53 , 54 , 56 , 57 ].…”

Section: Resultsmentioning

confidence: 99%

Emerging SiC Applications beyond Power Electronic Devices

et al. 2023

View full text Add to dashboard Cite

In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems to be solved and the outlooks for these new devices. The use of SiC for high temperature applications in space, high temperature CMOS, high radiation hard detectors, new optical devices, high frequency MEMS, new devices with integrated 2D materials and biosensors have been extensively reviewed in this paper. The development of these new applications, at least for the 4H-SiC ones, has been favored by the strong improvement in SiC technology and in the material quality and price, due to the increasing market for power devices. However, at the same time, these new applications need the development of new processes and the improvement of material properties (high temperature packages, channel mobility and threshold voltage instability improvement, thick epitaxial layers, low defects, long carrier lifetime, low epitaxial doping). Instead, in the case of 3C-SiC applications, several new projects have developed material processes to obtain more performing MEMS, photonics and biomedical devices. Despite the good performance of these devices and the potential market, the further development of the material and of the specific processes and the lack of several SiC foundries for these applications are limiting further development in these fields.

show abstract

Section: Resultsmentioning

confidence: 99%

Emerging SiC Applications beyond Power Electronic Devices

et al. 2023

View full text Add to dashboard Cite

show abstract

“…[13] Although better for integration, the lateral structure has certain drawbacks such as a more complex design and a higher on resistance which is detrimental to the e ciency of the converter. [12] A lateral structure also has a higher footprint than a vertical structure. The P + isolation also allows multiple devices together on the same die without sharing a common drain which further enables power converter design with two or more power switches.…”

Section: Overview Of the New Sic Technologymentioning

confidence: 99%

“…SPICE models have been developed for circuit simulation based on device measurement and characterization and are based on Level 2 parameters and this technology offers three metal layers in layout to accommodate complex designs where at least one of those three layers is used to route high-voltage signals. [12]…”

Section: Overview Of the New Sic Technologymentioning

confidence: 99%

A 400V Buck Converter Integrated with Gate- Drivers and Low-Voltage Control in a 25V- 600V Mixed-Mode SiC CMOS Technology

Gupta

Zhang

Liu

et al. 2023

Preprint

View full text Add to dashboard Cite

This paper offers the first demonstration of the design and layout of a fully integrated power converter in a monolithic Silicon Carbide (SiC) technology. A 400V Buck Converter integrated with Gate-Drivers and Low-Voltage Control circuitry in a 25V-600V Mixed-Mode SiC CMOS technology has been presented in this paper. A new SiC technology has been developed for this design which has a feature size of 1µm. This technology allows integration of High-Voltage Power FETs and Low-Voltage CMOS circuits on the same die with a common substrate. Both high-side and low-side Power FETs are N-type hence a bootstrap circuit is used, and the gate drivers use an isolated capacitive level shifter to translate the signals from the 25V domain to the 400V domain which is the input voltage of the Buck Converter. The load current is 1A and the nominal output voltage is 100V thereby meaning that the output power is 100W. The switching frequency is up to 1MHz, and the duty cycle can range from 10% to 90% signifying a wide range of operation of the converter.

show abstract

“…The devices were fabricated by Analog Devices, Inc. (ADI) fabrication facility in Hillview, San Jose, CA, using the same base process line [19] [20]. A 10 µm thick drift layer with Ntype doping concentration of 8×10 15 cm −3 on 6-inch, N+ 4H-SiC substrate was used for the fabrication of proposed 1.2 kV MOSFETs.…”

Section: Device Fabrication Technologymentioning

confidence: 99%

An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs

Kim¹,

Yun

Jang

et al. 2021

IEEE J. Electron Devices Soc.

Self Cite

View full text Add to dashboard Cite

A detailed structural analysis of 1.2 kV 4H-SiC MOSFETs with accumulation mode channel is reported in this paper. 1.2 kV SiC MOSFETs with a variety of cell designs were fabricated and compared with respect to the output and transfer characteristics, and blocking behaviors. All the design rules, such as channel length, JFET width, contact openings, gate-to-source overlap, and cell pitch were investigated to clearly provide the quantitative impact on the static performances. 2D-simulation was also conducted to support experimental results. As a result, it turned out that the channel length is the most determining factor for the specific on-resistance, resulting in 0.364 mΩ-cm 2 increase per 0.1 μm increase in the channel length. However, the channel potential is also largely dependent on the channel length such that the leakage current tends to increase with short channel design. The enhanced doping in the JFET region with a current spreading layer (CSL) is essential for achieving a narrower JFET width, which satisfies all static performances, as well as device reliability and ruggedness. Methods to further improve the trade-off characteristics using other design aspects are discussed in this paper.

show abstract

Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology

Cited by 22 publications

References 2 publications

Emerging SiC Applications beyond Power Electronic Devices

Emerging SiC Applications beyond Power Electronic Devices

A 400V Buck Converter Integrated with Gate- Drivers and Low-Voltage Control in a 25V- 600V Mixed-Mode SiC CMOS Technology

An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs

Contact Info

Product

Resources

About