Monolithic integration of a silicon driver circuit onto a lead lanthanum zirconate titanate substrate for smart spatial light modulator fabrication

Jin, Michael; Wang, Jinghua; Ozguz, V.; Lee, Sing H.

doi:10.1364/ao.33.002842

Cited by 8 publications

(1 citation statement)

References 10 publications

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“…As one can see, the quadratic electrooptic coefficients appear to be proportional to the dielectric constant squared, 62, which can be explained by a theory regarding the electrooptic effects in ferroelectrics.' 5 The thin film ferroelectric materials produced in our laboratory typically possess dielectric constant in the range of 1000-3000 and the quadratic electrooptic coefficient in the range of 0.2-2x 10-16 (in/V) 2 . Although lower than some bulk materials, these electrooptical coefficients are remarkable for polycrystalline thin film materials.…”

Section: Fundamentals Of Tfi Phase Modulatormentioning

confidence: 99%

<title>Fabrication and characterization of thin ferroelectric interferometers for light modulation</title>

Wang

Zheng

et al. 2000

Optical Storage and Optical Information Processing

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A thin ferroelectric interferometer (TFI) structure for light modulating devices is presented. It was fabricated entirely with thin film techniques on sapphire and silicon substrates. The ferroelectric layer in this structure was the lanthanum-modified lead zirconate titanate (PLZT) electrooptic material, deposited from a chemical precursor solution onto an ITO-coated dielectric mirror stack. Light intensity modulation in both transmission and reflection modes, and phase modulation in the reflection mode were demonstrated. Experimental and simulation data show that TFI devices can be fast switching with a low driving voltage. Variations of the basic TFI structure can be used for phase tunable spatial light modulators (SLM's) and laser beam steering devices. Design principles, fabrication procedure and the preliminary performance of the devices are described.

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Section: Fundamentals Of Tfi Phase Modulatormentioning

confidence: 99%

<title>Fabrication and characterization of thin ferroelectric interferometers for light modulation</title>

Wang

Zheng

et al. 2000

Optical Storage and Optical Information Processing

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Design and simulation of PLZT-based scanning grating lobe optical array generators

Talbot

1995

Optics Communications

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Structure-related optical properties of (Pb,La)(Zr,Ti)O3 thin films on indium tin oxide∕quartz substrates

Leng

Yang

et al. 2006

Journal of Applied Physics

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To be suitable for integrated optical devices, (Pb,La)(Zr,Ti)O3 (PLZT) ferroelectric thin films require high crystalline quality, low surface roughness, high optical index, and high transparency. In this paper, PLZT thin films have been grown in situ on indium tin oxide (ITO) coated quartz substrates by rf magnetron sputtering. X-ray diffraction, scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to investigate the structural properties of these PLZT films. The results show that the ferroelectric films exhibit satisfying crystallization with the highly (110)-oriented growth from 550°C, and the surface roughness value (∼3.1nm) in studied films is within the optimum range so that a low optical loss can be obtained. High quality PLZT ferroelectric thin films were further investigated by electrical measurements, showing that the remnant polarization Pr and coercive field Ec are approximately 11.3μC∕cm2 and 56.2kV∕cm, respectively. Spectroscopic ellipsometry (SE) was employed to characterize the depth profiles, the microstructural inhomogeneities (void and surface roughness), refractive index n, and extinction coefficient k of the PLZT film. In the analysis of the measured SE spectra, a three-layer Lorentz model with four oscillators was adopted to represent the optical properties of the PLZT film. In this model, the film was assumed to consist of two layers (a bottom bulk PLZT and a surface layer composed of bulk PLZT as well as void). Good agreement was obtained between the measured spectra and the model calculations. The film thickness measured from SEM is consistent with that obtained by SE, while the root mean square roughness determined by AFM is also close to our fitted effective surface layer thickness obtained by SE. The PLZT thin film on ITO-coated quartz substrate is highly transparent in the visible near infrared wavelength region, and the band gap energy Eg is estimated to be 3.54eV. The experimental results above tend to demonstrate the suitability of the PLZT films in situ grown on ITO∕quartz substrates for optical applications.

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Monolithic integration of a silicon driver circuit onto a lead lanthanum zirconate titanate substrate for smart spatial light modulator fabrication

Cited by 8 publications

References 10 publications

<title>Fabrication and characterization of thin ferroelectric interferometers for light modulation</title>

<title>Fabrication and characterization of thin ferroelectric interferometers for light modulation</title>

Design and simulation of PLZT-based scanning grating lobe optical array generators

Structure-related optical properties of (Pb,La)(Zr,Ti)O3 thin films on indium tin oxide∕quartz substrates

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