Monolithic integration of a nuclear radiation sensor and transistors on high-purity silicon

Audet, S.A.; Wouters, S.E.

doi:10.1109/23.52604

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Cited by 7 publications

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“…Ion implantation allows the formation of both CoSi 2 /Si structures and ternary structures of the Si/CoSi 2 /Si type with the (100) and (111) orientations [15][16][17][18]. The applied energy of implanted Co + 200 keV ions, the optimal dose is 3.8 • 10 17 cm −2 .…”

Section: Introductionmentioning

confidence: 99%

Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides

Rysbaev¹,

Irgashev²,

Kasimov³

et al. 2020

Eurasian J. Phys. Funct. Mater.

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The formation of nanosized films of silicides on the surface of Si (111) and Si (100) was studied by the method of low-energy ion implantation. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. It is shown that the appearance of new surface superstructures is additional confirmation of the formation of thin silicide films with a single crystal structure.

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Section: Introductionmentioning

confidence: 99%