1991
DOI: 10.1016/0168-9002(91)90164-l
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An overview of CMOS-SOI technology and its potential use in particle detection systems

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Cited by 8 publications
(2 citation statements)
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“…When silicon-on-insulator (SOI) technology emerged, it was considered to provide the ideal structure for monolithic radiation detectors. 2) It provides a thick sensing region in the handle wafer, and complementary metal-oxide-semiconductor (CMOS) circuits can be fabricated in the top Si layer. Research and development studies on monolithic SOI pixel detectors 3) revealed issues that must be solved:…”
Section: Introductionmentioning
confidence: 99%
“…When silicon-on-insulator (SOI) technology emerged, it was considered to provide the ideal structure for monolithic radiation detectors. 2) It provides a thick sensing region in the handle wafer, and complementary metal-oxide-semiconductor (CMOS) circuits can be fabricated in the top Si layer. Research and development studies on monolithic SOI pixel detectors 3) revealed issues that must be solved:…”
Section: Introductionmentioning
confidence: 99%
“…1-(b). It was already discussed in 1990 to use the SOI technology for vertex detectors [4]. However, there are several issues to address in order to use the SOI technology for particle detector, and the SOI pixel detector is still not so popular.…”
Section: Introductionmentioning
confidence: 99%