Monolithic GaAs travelling-wave amplifier

Ayasli, Y.; Vorhaus, J.L.; Mozzi, R. L.; Reynolds, L.D.

doi:10.1049/el:19810287

Cited by 39 publications

(4 citation statements)

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“…Expressions which derive travelling-wave amplifier gain (e.g. [7]) can be modified by replacing the gain of individual stages g m with gm * 1 +gm * R d s, T 3 , where R ds,T 3 is the channel resistance of the source feedback transistor and g m * is the equivalent transconductance of the cascode stage. To keep the feedback transistor in linear mode, the R F transistor (T1) gate bias needs to be adjusted together with V ctr l = V G3 .…”

Section: Variable Gain Amplifier Operationmentioning

confidence: 99%

One Single Travelling-Wave MMIC for Highly Linear Broadband Mixers and Variable Gain Amplifiers

Kallfass

Purtova

Brokmeier

et al. 2005

IEEE MTT-S International Microwave Symposium Digest, 2005.

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Section: Variable Gain Amplifier Operationmentioning

confidence: 99%

One Single Travelling-Wave MMIC for Highly Linear Broadband Mixers and Variable Gain Amplifiers

Kallfass

Purtova

Brokmeier

et al. 2005

IEEE MTT-S International Microwave Symposium Digest, 2005.

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“…In order to achieve wideband gain beyond the octave bandwidth, the distributed architecture is the most promising solution [13]. Up to 235 GHz of bandwidth [14] have been reported.…”

Section: Introductionmentioning

confidence: 99%

Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology

Shivan

Kaule

Hossain

et al. 2019

Int. J. Microw. Wireless Technol.

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This paper reports on an ultra-wideband low-noise distributed amplifier (LNDA) in a transferred-substrate InP double heterojunction bipolar transistor (DHBT) technology which exhibits a uniform low-noise characteristic over a large frequency range. To obtain very high bandwidth, a distributed architecture has been chosen with cascode unit gain cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and ft/fmax of ~360/492 GHz, respectively. Due to optimum line-impedance matching, low common-base transistor capacitance, and low collector-current operation, the circuit exhibits a low-noise figure (NF) over a broad frequency range. A 3-dB bandwidth from 40 to 185 GHz is measured, with an NF of 8 dB within the frequency range between 75 and 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single-stage amplifiers with a cascode configuration. Additionally, this work has proposed that the noise sources of the InP DHBTs are largely uncorrelated. As a result, a reliable prediction can be done for the NF of ultra-wideband circuits beyond the frequency range of the measurement equipment.

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“…The operating mechanisms of distributed amplifiers (DA) have been extensively investigated in the last few years, due to their high potential to achieve flat gain in bands of tens of gigahertz. These circuits have been implemented in mono-lithic [l] and hybrid [2] structures, using FETs with small gate widths. O n the other hand, if the gate periphery is increased, there will be an increase in the values of transconductance and drain-gate capacitance.…”

Section: Introductionmentioning

confidence: 99%

Using inductive series feedback to stabilize a microwave distributed amplifier with high gain fets: A new design approach

Paixato

Souza

Kretly

1993

Micro & Optical Tech Letters

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Numerical results are presented to show how series inductive feedback between the source of the FET and ground, in a common‐source configuration, can stabilize a hybrid distributed amplifier. This kind of feedback is useful when using high transconductance FETs. Finally, for a 0.3 × 200‐μm HEMT (NEC 321) in chip form, an unconditionally stable four‐section distributed amplifier is designed using the suggested feedback, without compromising the gain‐bandwidth product. © 1993 John Wiley & Sons, Inc.

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Monolithic GaAs travelling-wave amplifier

Cited by 39 publications

References 0 publications

One Single Travelling-Wave MMIC for Highly Linear Broadband Mixers and Variable Gain Amplifiers

One Single Travelling-Wave MMIC for Highly Linear Broadband Mixers and Variable Gain Amplifiers

Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology

Using inductive series feedback to stabilize a microwave distributed amplifier with high gain fets: A new design approach

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