Molecular dynamics studies of ion beam implantation and patterning of silicon: Effect of noble gas cluster formation

Lively, Michael; Bennett, Samuel X.; Allain, Jean Paul

doi:10.1103/physrevb.97.235443

Cited by 10 publications

(2 citation statements)

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“…The numbers of single-atom sputtering, chain sputtering, and cluster sputtering at varying angles were quantified. Clusters were identified by finding groups of neighboring atoms, defined as atoms that were separated by a distance of less than 5.4 Å and containing more than 5 atoms . The atomic sputtering types were mainly single atom and chain removal at beam angles of 0° and 75°, while at beam angles of 30° and 60°, the main atomic sputtering type was cluster.…”

Section: Resultsmentioning

confidence: 99%

“…Clusters were identified by finding groups of neighboring atoms, defined as atoms that were separated by a distance of less than 5.4 Å and containing more than 5 atoms. 37 The atomic sputtering types were mainly single atom and chain removal at beam angles of 0°and 75°, while at beam angles of 30°and 60°, the main atomic sputtering type was cluster. The percentage of cluster removal was found to be less than 10% at beam angles of 0°and 75°, with values of 8% and 6%, respectively.…”

Section: Mechanism Of Ibf-induced Morphologymentioning

confidence: 97%

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Subnanoscale Ion Beam Modification-Assisted Smoothing of Heterostructure Surfaces

Zhang,

Guo,

Jin

et al. 2024

ACS Appl. Mater. Interfaces

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Glass ceramic (GC) is the most promising material for objective lenses for extreme ultraviolet lithography that must meet the subnanometer precision, which is characterized by low values of high spatial frequency surface roughness (HSFR). However, the HSFR of GC is typically degraded during ion beam figuring (IBF). Herein, a developed method for constructing molecular dynamics (MD) models of GC was presented, and the formation mechanisms of surface morphologies were investigated. The results indicated that the generation of the dot-like microstructure was the result of the difference in the erosion rate caused by the difference in the intrinsic properties between ceramic phases (CPs) and glass phases (GPs). Further, the difference in the microstructure of the IBF surface under different beam angles was mainly caused by the difference in the two types of sputtering. Quantum mechanical calculations showed that the presence of interstitial atoms would result in electron rearrangement and that the electron localization can lead to a reduction in CP stability. To obtain a homogeneous surface, the effects of beam parameters on the heterogeneous surface were systematically investigated based on the proposed MD model. Then, a novel ion beam modification (IBM) method was proposed and demonstrated by TEM and GIXRD. The range of ion beam smoothing parameters that could effectively converge the HSFR of the modified surface was determined through numerous experiments. Using the optimized beam parameters, an ultrathin homogeneous modified surface within 3 nm was obtained. The HSFR of GC smoothed by ion beam modification-assisted smoothing (IBMS) dropped from 0.348 to 0.090 nm, a 74% reduction. These research results offer a deeper understanding of the morphology formation mechanisms of the GC surfaces involved in ion beam processing and may point to a new approach for achieving ultrasmooth heterostructure surfaces down to the subnanometer scale.

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Section: Resultsmentioning

confidence: 99%

Section: Mechanism Of Ibf-induced Morphologymentioning

confidence: 97%