2021
DOI: 10.1016/j.apsusc.2020.148278
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Characterizing interface structure between crystalline and ion bombarded silicon by transmission electron microscopy and molecular dynamics simulations

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Cited by 4 publications
(2 citation statements)
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“…During FIB patterning, crystalline Si is converted to amorphous Si to a depth of several tens of nm. 21 To confirm that there is no tendency toward bubble formation in the HL regions (bare amorphous Si) and to better understand nanobubble formation at the molecular level on the stripes (OTS-Si), MD simulations were performed on HB/HL nanopatterned and amorphous Si surfaces (Figure 7). Amorphous Si substrates are designated "(100) amorphous" in Figure 7 based on the starting single-crystal orientation used to form the amorphous phase in the simulations.…”
Section: ■ Materials and Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…During FIB patterning, crystalline Si is converted to amorphous Si to a depth of several tens of nm. 21 To confirm that there is no tendency toward bubble formation in the HL regions (bare amorphous Si) and to better understand nanobubble formation at the molecular level on the stripes (OTS-Si), MD simulations were performed on HB/HL nanopatterned and amorphous Si surfaces (Figure 7). Amorphous Si substrates are designated "(100) amorphous" in Figure 7 based on the starting single-crystal orientation used to form the amorphous phase in the simulations.…”
Section: ■ Materials and Methodsmentioning
confidence: 99%
“…There are, however, several noteworthy drawbacks of FIB milling that directly impact its compatibility with surface nanobubble patterning. In the process of ion beam exposure, FIB milling creates myriad changes to the underlying substrate, including amorphization of Si (including up to ∼20 nm depth), Ga + ion implantation, and changes in surface roughness . Molecular dynamics (MD) simulations have demonstrated changes in water contact angle, in addition to nano-order deformation and hillock structure formation .…”
Section: Introductionmentioning
confidence: 99%