Molecular dynamics simulations of swift heavy ion induced defect recovery in SiC

Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation

“…This value is close to the value of g ¼ 6 Â 10 18 J s À 1 m À 3 K À 1 , which can be derived from ref. 52. To calculate the lattice temperature resulting from SHI irradiation with the TTM, we can exploit the fact that the travelled length (projected onto the surface) of the ion beam with respect to its actual depth d perpendicular to the surface is given by L ¼ d/tan(Y).…”

Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

“…Because there is no significant difference in the electric field before and after the ion strike at this location, the temperature rise can be attributed to the changes in the current density. The electron-phonon coupling can be assumed to occur at timescales of [20], [21]. This means that during the Joule heating, the temperature equilibrium between electrons and the lattice atoms is achieved faster than the timescales involved in the charge collection.…”

Advances in understanding of swift heavy-ion tracks in complex ceramics

“…In this regime, the energy deposition 60 of the ions is dominated by electronic stopping, and each individ- 61 ual ion may induce a linear trail of damage with a width of a few 62 nanometers and a length of several tens of micrometers or more. 63 During the last decade, radiation effects induced by swift heavy 64 ions have been studied in a wide range of materials for basic 65 research, as well as for very different applications. The interest in 66 ion tracks has also been boosted by the rapidly increasing activities 67 in nanoscience, in particular for the fabrication of tailored nanop- 68 ores and nanowires [1][2][3][4].…”