Molecular control over Ag/p-Si diode by organic layer

Electrical characteristics of Au/Pyronine-B/moderately doped n-type InP Schottky structures in a wide temperature range

“…A significant increase in the ideality factor and decrease in the SBH at low temperature are possibly originated by structural defects in the semiconductor, inhomogeneous doping, interface roughness, interfacial reactions, diffusion/interdiffusion of the contaminations of applied materials on semiconductor surface, inhomogeneities of thickness and composition of the layer, and non-uniformity of interfacial charges or the presence of a thin intentionally grown organic TF layer between the metal and the semiconductor [23,31,[70][71][72]. Since current transport across the MS interface is a temperature-activated process, the current will be controlled by the current through the patches having low BH at the low temperatures.…”

Current–voltage and capacitance–voltage characteristics of Al/p-type silicon/organic semiconductor based on phthalocyanine rectifier contact

“…The solution of the CoPc was homogenized for 1 h by mixing with rotation before the deposition. Then, the film of the CoPc was prepared by dip coating the solution on p-Si with subsequent drying [15][16][17]. Au metal provides ohmic contact to CoPc and thus, Au metal was evaporated on CoPc film by thermal evaporator system.…”

Analysis of electronic parameters and interface states of boron dispersed triethanolamine/p-Si structure by AFM, I–V, C–V–f and G/ω–V–f techniques

“…The electronic parameters of metal-semiconductor contacts can be modified by using organic materials and this modification could lead to an efficient barrier height and interface modification. Some studies have shown that the electronic parameters of the metal-inorganic diodes can be modified with various organic materials [1][2][3][4][5][6][7][8][9][10][11][12]. The control of metal/semiconductor diodes with organic materials is the key to fabricating reproducible metal/organic semiconductor/inorganic semiconductor rectifying devices.…”