Electrical characteristics of Au/Pyronine-B/moderately doped n-type InP Schottky structures in a wide temperature range

Soylu, M.; Abay, B.; Onganer, Yavuz

doi:10.1016/j.jallcom.2011.01.183

Cited by 12 publications

(8 citation statements)

References 81 publications

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“…The SBH values of 0.44, 0.46, 0.48, and 0.51 eV at 300 K obtained by Benamara et al, Szydlo et al, Ucar et al, and Shi et al, respectively. Further, Soylu et al found that the BH of Au/pyronine‐B/moderately doped n‐InP contact was 0.66 eV. In our work, it is found that the interfacial layer of PVA increases the BH (0.63 eV) at 300 K by the influence of the space charge region of the Au/n‐InP Schottky junction.…”

Section: Resultssupporting

confidence: 64%

“…Polymer‐based schemes for the fabrication of Schottky contacts on semiconductor have been extensively investigated . For example, Gullu et al evaluated electrical characteristics of the DNA‐based device in a wide temperature range.…”

Section: Introductionmentioning

confidence: 99%

“…For example, Gullu et al evaluated electrical characteristics of the DNA‐based device in a wide temperature range. They reported that the barrier height (BH) and ideality factor (

n

) ranged from 0.40 eV and 2.96 at 80 K to 0.98 and 1.26 at 300 K. Soylu et al investigated temperature dependence of I – V characteristics of the Au/pyronine‐B/moderately doped n‐InP SBD in the temperature range 160–400 K. They achieved modification of the interfacial potential barrier using the thin interlayer of the pyronine‐B. Dokme et al studied electrical and dielectric properties of Au/PVA (Ni, Zn‐doped)/n‐Si Schottky diodes in the temperature range 80–400 K. They showed that dielectric constant (

ε^{'}

), dielectric loss (

ε^{″}

), dielectric loss tangent (

\tan δ

) are strongly temperature‐dependent.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n‐inp schottky barrier interface

Reddy

Kang

Lee

et al. 2013

J of Applied Polymer Sci

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In this work, we have investigated the electrical properties of Au/n‐InP contacts with a thin layer of polyvinyl alcohol (PVA) as an interlayer. The current–voltage (I–V) and capacitance–voltage (C–V) measurements are carried out in the temperature range of 175–425 K. The Au/PVA/n‐InP Schottky structure show nonideal behaviors and indicates the presence of a nonuniform distribution of interface states. The temperature dependent interface states densities (NSS), ideality factor n(V,T) and barrier height φb(V,T) are obtained. An abnormal decrease in zero‐bias barrier height (BH) and increase in the ideality factor ( n) with decreasing temperature have been explained on the basis of the thermionic emission theory with Gaussian distribution (GD) of the BHs due to the BH inhomogeneities. The experimental I–V characteristics of Au/PVA/n‐InP Schottky diode has revealed the existence of a double GD with mean BH values of ( φ¯bo) of 1.246 and 0.899 eV and standard deviation ( σo) of 0.176 and 0.137 V, respectively. Consequently, the modified conventional activation energy ln⁡(Io/T2)−(q2σo2/2kB2T2) versus 103/T plot gives φ¯bo and Richardson constants ( AR*) and the values are 1.17 and 0.71 eV and 9.9 and 6.9 A/cm2 K2, respectively, without using the temperature coefficient of the BH. The effective Richardson constant value of 9.9 A/cm2 K2 is very close to the theoretical value of 9.4 A/cm2 K2 for n‐InP. The discrepancy between Schottky barrier heights estimated from I–V and C–V measurements is also discussed. © 2013 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014, 131, 39773.

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Section: Resultssupporting

confidence: 64%

Section: Introductionmentioning

confidence: 99%

“…For example, Gullu et al evaluated electrical characteristics of the DNA‐based device in a wide temperature range. They reported that the barrier height (BH) and ideality factor (

n

ε^{'}

), dielectric loss (

ε^{″}

), dielectric loss tangent (

\tan δ

) are strongly temperature‐dependent.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n‐inp schottky barrier interface

Reddy

Kang

Lee

et al. 2013

J of Applied Polymer Sci

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“…The value of Richardson constant (A * ) determined from the intercept at the ordinate of this plot is equal to 1.242 × 10 -3 A cm −2 K −2 , which is lower than the known value of 112 A cm −2 K −2 for n-type Si. This difference in the value of A * may be due to the presence of the spatially inhomogeneous BHs and potential fluctuations at the interface that consist of low and high barrier areas [9,10,21,23,24,[27][28][29][30][31][32][33].…”

Section: The Richardson Constantmentioning

confidence: 99%

“…It is assumed that the mean SBH ( ¯ B ) and σ s are linearly bias dependent on Gaussian parameters, such as ¯ B = ¯ Bo + ρ 2 V and standard deviation σ s = σ so + ρ 3 V , where ρ 2 and ρ 3 are the bias voltage coefficients and depict the voltage deformation of the BH distribution, while ¯ Bo and σ s values are the mean BH and its standard deviation at zero bias (V = 0), respectively [11,18,19,29,34,[38][39][40][41].…”

Section: Analysis Of Inhomogeneous Bhmentioning

confidence: 99%

The Richardson constant and barrier inhomogeneity at Au/Si₃N₄/n-Si (MIS) Schottky diodes

Tataroğlu¹,

Pür²

2013

Phys. Scr.

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Si3N4 films were deposited on n-type silicon substrate by the radio frequency magnetron sputtering technique. The current–voltage (I–V) characteristics of Au/Si3N4/n-Si (metal–insulator–semiconductor) Schottky diodes were investigated in the temperature range of 160–400 K. Experimental results show an abnormal increase in the zero-bias barrier height (BH) (ΦBo) and a decrease in the ideality factor (n) with increasing temperature. This behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution (GD) of BHs. The conventional Richardson plot (ln(Io/T2) versus 1000/T) exhibits a linearity above about 300 K. The values of activation energy (Ea) and Richardson constant (A*) were found to be 0.350 eV and 1.242 × 10–3 A cm−2 K−2 from the slope and the intercept at the ordinate of the linear region of this plot, respectively. Also, we attempted to draw a ΦBo versus q/2kT plot to determine evidence of the GD of BHs, and the values of and σs = 0.137 eV for the mean BH and zero-bias standard deviation, respectively, were obtained from this plot; then, a modified ln(Io/T2) − q2σs2/2k2T2 versus q/kT plot gives and A* as 0.992 eV and 108.228 A cm−2 K−2, respectively. This value of A* is very close to the theoretical value of 112 A cm−2 K−2 for n-type Si.

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Analysis of interface states and series resistance for Al/PVA:n-CdS nanocomposite metal–semiconductor and metal–insulator–semiconductor diode structures

Sharma

Tripathi

2013

Appl. Phys. A

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Electrical characteristics of Au/Pyronine-B/moderately doped n-type InP Schottky structures in a wide temperature range

Cited by 12 publications

References 81 publications

Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n‐inp schottky barrier interface

Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n‐inp schottky barrier interface

The Richardson constant and barrier inhomogeneity at Au/Si₃N₄/n-Si (MIS) Schottky diodes

Analysis of interface states and series resistance for Al/PVA:n-CdS nanocomposite metal–semiconductor and metal–insulator–semiconductor diode structures

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Electrical characteristics of Au/Pyronine-B/moderately doped n-type InP Schottky structures in a wide temperature range

Cited by 12 publications

References 81 publications

Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n‐inp schottky barrier interface

Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n‐inp schottky barrier interface

The Richardson constant and barrier inhomogeneity at Au/Si3N4/n-Si (MIS) Schottky diodes

Analysis of interface states and series resistance for Al/PVA:n-CdS nanocomposite metal–semiconductor and metal–insulator–semiconductor diode structures

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The Richardson constant and barrier inhomogeneity at Au/Si₃N₄/n-Si (MIS) Schottky diodes