Analysis of electronic parameters and interface states of boron dispersed triethanolamine/p-Si structure by AFM, I–V, C–V–f and G/ω–V–f techniques

Abstract

a b s t r a c tThe electronic parameters and interface state properties of boron dispersed triethanolamine/p-Si structure have been investigated by atomic force microscopy, I-V, C-V-f and G/x-V-f techniques. The surface topography and phase image of the TEA-B film deposited onto p-Si substrate were analyzed by atomic force microscopy. The atomic force microscopy results show a homogenous distribution of boron particles in triethanolamine film. The electronic parameters (barrier height, ideality factor and average series resistance) obtained from I-V characteristics of the diode are 0.81 eV, 2.07 and 5.04 kX, respectively. The interface state density of the diode was found to be 2.54 Â 10 10 eV À cm

Electrical characterization and device characterization of ZnO microring shaped films by sol–gel method

“…The E g optical band gap of ZnO film was determined from curve of (F(R)h /t) 2 vs. h and was found to be 3.22 eV. The optical band gap of ZnO studied is lower than that of undoped ZnO materials obtained by various methods [31,32]. This suggests that the optical band gap of ZnO semiconductor changes with respect to synthesis method used.…”

Effects of illumination on capacitance characteristics of Au/3C-SiC/p-Si/Al diode

“…The decrease in the capacitance at high frequencies depends on the ability of the charge carriers to follow the applied alternating current (AC) signal. If the C-V measurements were performed at sufficiently higher frequencies, the charge at the interface could not follow the AC sig- nal [25]. It is seen in the C-V plots that these curves have a peak in low frequency measurements.…”

Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol)/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method

“…In this technique, an organic interfacial layer is inserted between inorganic semiconductor and metal. As they can be applied to various areas like solar cells and Schottky diodes, there has been a growing interest in polymers such as poly(4-vinyl phenol), polyaniline, polyvinyl alcohol (PVA), poly(alkylthiophene) polypyrrole, polythiophene, and poly(3-hexylthiophene) [7][8][9][10][11][12][13][14][15][16][17][18]. In polymers, we find local free-volume holes or cavities of atomic and molecular dimensions, which may be the result of irregular packing of the molecules in amorphous phase (static and preexisting holes) and molecular relaxation of polymer chains and terminal ends (dynamic and transient holes).…”