Effects of illumination on capacitance characteristics of Au/3C-SiC/p-Si/Al diode

Composite metal oxide semiconductor based photodiodes for solar panel tracking applications

“…As seen in Fig. 1, at higher forward-bias voltages, ln(I)-V curves under dark conditions deviate from linearity due to the parasitic resistance effects, interface states, etc [19][20][21][22][23][24][25][26]. The obtained ideality factor (n) of the diodes were determined from the Fig.1 [12].…”

The illustrated brief application of defect distribution model for heterojunction device by admittance spectroscopy

“…There are plenty of publications in the literature about interface state density distribution in some diode structures [1][2][3][4][5][6]. There are many different kinds of models that have been adopted into measurement analysis by many researchers for more than three decades [7][8][9][10][11].…”

8.5.4 Fabrication and Characterization of MEMS Based Optical Hydrogen Sensors

“…3C-SiC is interesting material for two third generation photovoltaic (PV) material [4]. Recently, photocapacitance properties of 3C-SiC/p-Si structure were studied [5]. These properties can be utilized as light detecting parts.…”