Molecular beam epitaxy of strain-compensated quantum-well intersubband photodetectors

Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode

“…InGaAs/GaAsP strain-compensated multiple quantum wells (MQWs), which are promising narrow-band gap materials pseudo-latticematched to GaAs, 1 have been widely used in laser diodes, 2 photodetectors, 3 modulators 4 and in other electronic devices, and now attention is also being paid to their applications in solar cells. 5,6 InGaAs/GaAsP MQWs, with a bandgap of 1.2 eV, can be used as an active region in laser devices and middle cell materials of tandem structures in solar cells to achieve good recombination efficiency and current match conditions, since they can be substantially lattice matched to GaAs by adjusting their average lattice constant.…”

Low-temperature MOVPE using TEGa for suppressed layer undulation in InxGa1−xAs/GaAs1−yPy superlattice on vicinal substrates

“…A targeted bandgap including quantum confinement effects can be obtained by adjusting the composition and the thickness of each layer. InGaAs/GaAsP SL has been used for various optoelectronic devices such as laser diodes [6,7], photo detectors [8], modulators [9], and solar cells [10,11].…”

Investigation of the growth temperature on indium diffusion in InGaAs/GaAsP multiple quantum wells and photoelectric properties

“…The InGaAs/GaAsP MQWs heterojunction is crucial in the fabrication of many optoelectronic devices, such as lasers, [1][2][3] solar cells modulators [4][5][6][7] and photodetectors. 8,9 The key point of this study is to address the difficulty in the formation of abrupt InGaAs/GaAsP heterointerfaces, particularly when utilizing high phosphorus and indium content. 10 The unintentional InGaAsP interfacial layers that interlope on InGaAs wells and GaAsP barriers could be introduced by switching column V ow or indium atomic diffusion at the interface.…”