Molecular beam epitaxy of phase pure cubic InN

Abstract

Cubic InN layers were grown by plasma assisted molecular beam epitaxy on 3C-SiC (001) substrates at growth temperatures from 419to490°C. X-ray diffraction investigations show that the layers have zinc blende structure with only a small fraction of wurtzite phase inclusions on the (111) facets of the cubic layer. The full width at half maximum of the c-InN (002) x-ray rocking curve is less than 50arcmin. The lattice constant is 5.01±0.01Å. Low temperature photoluminescence measurements yield a c-InN band gap of 0.61eV. At room temperature the band gap is about 0.56eV and the free electron concentration is about n∼1.7×1019cm−3.

Comment on “Band gap bowing and electron localization of GaXIn1−XN” [J. Appl. Phys. 100, 093717 (2006)]

“…The LDA-BZW results that also agree well with experiment are shown in Table I. In particular, the LDA-BZW predictions of 5.017 Å and 0.65 eV for the equilibrium lattice constant and the band gap of c-InN have recently been corroborated by Schörmann et al 9 who found 5.01Ϯ 0.01 Å and 0.61 eV for these quantities, respectively. As summarized elsewhere, 7 the density fuctional theory ͑DFT͒-BZW calculations are totally ab initio and selfconsistent.…”

Ab‐initio theory of semiconductor band structures: New developments and progress

“…(zinc blende) or 0.71 eV (wurtzite) in extremely good agreement with measured values [53,57,[68][69][70][71]. In general, the improvement results from the good performance of the HSE03 starting point for materials that comprise d-electrons such as GaAs, CdS, GaN, ZnO, and ZnS, for which the mean absolute relative error of the HSE03 + 0 0 G W gaps is calculated to be 7.9%, while it is about 12.2% in the GGA + 0 0 G W approach.…”

“…The HSE03 + 0 0 G W gaps approach recent measured values of 0.70 ± 0.05 eV for wurtzite [81] and 0.6 eV for zinc-blende [53,82] InN. The CBM at Γ is much lower in energy than the conduction-band edges at other points in k-space.…”

“…by means of molecular beam epitaxy [53]. Their quasiparticle band structures and densities of states are given in Figs.…”

Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

“…The ͑001͒ zinc-blende sample was grown on an ͑001͒ 3C-SiC substrate incorporating a zinc-blende GaN buffer layer, resulting in an estimated 95% zinc-blende phase InN. 9 Details of the various growth methods are reported elsewhere. [9][10][11][12] The x-ray photoemission spectroscopy ͑XPS͒ measurements were performed at room temperature using a Scienta ESCA300 spectrometer at the National Centre for Electron Spectroscopy and Surface Analysis, Daresbury Laboratory, UK.…”