Molecular Beam Epitaxial Growth and Characterization of GaAs1-ySbyLayers on (111)B InP Substrates

Higashino, Toshiyuki; Kawamura, Y.; Fujimoto, Masato; Kondô, Atsushi; Takasaki, Hideki; Inoue, Naohisa

doi:10.1143/jjap.41.1012

Cited by 15 publications

(5 citation statements)

References 4 publications

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“…One thing worth to note for the samples grown at 550 1C is that the Sb composition of (1 1 1)B GaAsSb is higher than that of (1 0 0) GaAsSb. Similar effect has also been observed in GaAsSb latticematched to InP [13]. The higher Sb incorporation efficiency could be due to the longer surface lifetime of Sb adatom on (1 1 1)B plane.…”

Section: Resultssupporting

confidence: 76%

[1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxy

Chou

Lin

Wan

et al. 2006

Microelectronics Journal

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Section: Resultssupporting

confidence: 76%

[1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxy

Chou

Lin

Wan

et al. 2006

Microelectronics Journal

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“…The growth rate of the GaAsSb was 0.70 mm/h. The Sb composition of y is 0.49 for the GaAs 1Ày Sb y on the (0 0 1) InP, which is nearly lattice matched to the (0 0 1) InP substrate [6,12,13].…”

Section: Methodsmentioning

confidence: 99%

Atomic arrangement in a CuPt-B-type ordered GaAsSb layer grown by molecular beam epitaxy observed by cross sectional scanning tunneling microscope

Gomyo

Ohkouchi

Kawamura

2007

Journal of Crystal Growth

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“…These are evidence of efficient passivation of surface states by the GaAs shell that enhance the PL intensity. ,, However, the Te-doped samples exhibited a red shift of ∼120 meV with respect to the intrinsic sample at 4 K. The GaAs passivation leads to a slight blue shift in PL peak of the sample I compared to H, speculated to arise from the compressive strain at the core–shell interface of the NWs . The increase in PL and red shift in Te-doped samples could be viewed as confirmation of n-type doping leading to compensation of defects , and broadening of donor levels leading to the donor to acceptor transitions at lower energy …”

Section: Resultsmentioning

confidence: 86%

“…35,55,56 However, the Te-doped samples exhibited a red shift of ∼120 meV with respect to the intrinsic sample at 4 K. The GaAs passivation leads to a slight blue shift in PL peak of the sample I compared to H, speculated to arise from the compressive strain at the core−shell interface of the NWs. 57 The increase in PL and red shift in Te-doped samples could be viewed as confirmation of n-type doping leading to compensation of defects 58,59 and broadening of donor levels leading to the donor to acceptor transitions at lower energy. 60 The NWs were also characterized by Raman spectra (Figure 11a) to evaluate the NW growth-induced modifications of plasma-treated graphene.…”

Section: ■ Results and Discussionmentioning

confidence: 98%

Hybrid GaAsSb/GaAs Heterostructure Core–Shell Nanowire/Graphene and Photodetector Applications

Nalamati

Devkota

et al. 2020

ACS Appl. Electron. Mater.

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We report the growth of vertical, high-quality GaAs0.9Sb0.1 nanowires (NWs) with improved density on oxygen (O2) plasma-treated monolayer graphene/SiO2/p-Si(111) by self-catalyzed molecular beam epitaxy. An O2 plasma treatment of the graphene under mild conditions enabled modification of the surface functionalization and improved reactivity of the graphene surface to semiconductor adatoms. The rise in the disorder peak of the Raman mode, decreased surface conductivity, and creation of additional O2 groups of plasma-treated graphene compared to that of pristine graphene confirmed functionalization of the graphene. To enhance the nucleation centers further for the vertical yield of NWs on the graphene surface, NWs were grown on a higher Sb composition GaAs0.6Sb0.4 stem for surface engineering the graphene surface via the surfactant effect of Sb and for better lattice matching. The NWs grown under optimal conditions exhibited a zinc blende crystal structure with no discernible structural defects. The NWs with a GaAs-passivated shell exhibited photoluminescence emission at 1.35 eV at 4 K and 1.28 eV at room temperature. The ensemble device fabricated with a top segment of GaAsSb NW-doped n-type using a GaTe captive source exhibited an optical responsivity of 110 A/W with a detectivity of 1.1 × 1014 Jones. These results of hybrid GaAsSb NW heterostructure/graphene devices show significant potential toward the fabrication of flexible near-infrared photodetector device applications. Further, the simple and efficient O2 plasma treatment approach for surface engineering of graphene in conjunction with a high Sb compositional stem has shown to be a promising route that can be broadly applicable for the growth of other III–V ternary material systems for improving the vertical yield of NWs.

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Molecular Beam Epitaxial Growth and Characterization of GaAs_1-ySb_yLayers on (111)B InP Substrates

Cited by 15 publications

References 4 publications

[1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxy

[1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxy

Atomic arrangement in a CuPt-B-type ordered GaAsSb layer grown by molecular beam epitaxy observed by cross sectional scanning tunneling microscope

Hybrid GaAsSb/GaAs Heterostructure Core–Shell Nanowire/Graphene and Photodetector Applications

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