Atomic arrangement in a CuPt-B-type ordered GaAsSb layer grown by molecular beam epitaxy observed by cross sectional scanning tunneling microscope

Gomyo, Akiko; Ohkouchi, Shunsuke; Kawamura, Y.

doi:10.1016/j.jcrysgro.2006.11.125

Cited by 2 publications

(1 citation statement)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, we identify the bright protrusions, which are seen on all the sidewalls when an InAs 1−x Sb x segment is grown, as Sb atoms. We note that the contrast of Sb atoms in comparison with As atoms is consistent with previous cross-sectional STM studies of antimonide-based alloys [53][54][55][56]. The rather constant contrast height between all the bright atoms with respect to the As sublattice indicates that only the Sb atoms belonging to the surface layer are observed.…”

Section: Surface and Overgrowth Compositionsupporting

confidence: 90%

Faceting, composition and crystal phase evolution in III–V antimonide nanowire heterostructures revealed by combining microscopy techniques

et al. 2012

View full text Add to dashboard Cite

III-V antimonide nanowires are among the most interesting semiconductors for transport physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal material properties. In order to investigate their complex crystal structure evolution, faceting and composition, we report a combined scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) study of gold-nucleated ternary InAs/InAs(1-x)Sb(x) nanowire heterostructures grown by molecular beam epitaxy. SEM showed the general morphology and faceting, TEM revealed the internal crystal structure and ternary compositions, while STM was successfully applied to characterize the oxide-free nanowire sidewalls, in terms of nanofaceting morphology, atomic structure and surface composition. The complementary use of these techniques allows for correlation of the morphological and structural properties of the nanowires with the amount of Sb incorporated during growth. The addition of even a minute amount of Sb to InAs changes the crystal structure from perfect wurtzite to perfect zinc blende, via intermediate stacking fault and pseudo-periodic twinning regimes. Moreover, the addition of Sb during the axial growth of InAs/InAs(1-x)Sb(x) heterostructure nanowires causes a significant conformal lateral overgrowth on both segments, leading to the spontaneous formation of a core-shell structure, with an Sb-rich shell.

show abstract

Section: Surface and Overgrowth Compositionsupporting

confidence: 90%

Faceting, composition and crystal phase evolution in III–V antimonide nanowire heterostructures revealed by combining microscopy techniques

et al. 2012

View full text Add to dashboard Cite

show abstract

Atomistic modeling of bond lengths in random and ordered III-V alloys

Detz

Strasser

2013

Journal of Applied Physics

View full text Add to dashboard Cite

This work provides comprehensive modeling for the bond length and angle distributions in random and spontaneously ordered ternary III-V alloys using empirical interaction potentials. The compounds InxGa1−xAs, GaAs1−xSbx, and InxGa1−xP were used as model systems due to their technological importance and the fact that ordered structures were observed experimentally in these materials. For random alloys, we reproduce the bimodal bond length distribution, which allows linear fits with slopes between 0.087 Å and 0.1059 Å for all bond types. The calculated values for dilute compositions slightly deviate from these functions, causing stronger deformations. In the case of CuPt-ordered structures, the bond length distribution is shown to collapse to four sharp peaks with an area ratio of 1:3:3:1, which originate from a different atom to atom distance within the different (111) planes and perpendicular to these. An essential consequence of this atomic arrangement is the different spacings for the different stacked binaries along the (111) direction, which also leads to strain values up to −0.819% for In0.5Ga0.5P and −1.827% for GaAs0.5Sb0.5. Furthermore, the broad bond angle distributions of random alloys collapse into two peaks for CuPt-like structures. On the other hand, CuAu-type ordering is shown to lead to a sharp bimodal bond length distribution but with five different groups of bond angles, which can be identified with the different atomic configurations in ternary zincblende crystals.

show abstract

Atomic arrangement in a CuPt-B-type ordered GaAsSb layer grown by molecular beam epitaxy observed by cross sectional scanning tunneling microscope

Cited by 2 publications

References 15 publications

Faceting, composition and crystal phase evolution in III–V antimonide nanowire heterostructures revealed by combining microscopy techniques

Faceting, composition and crystal phase evolution in III–V antimonide nanowire heterostructures revealed by combining microscopy techniques

Atomistic modeling of bond lengths in random and ordered III-V alloys

Contact Info

Product

Resources

About