[1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxy

Chou, Li-Chang; Lin, Yan‐Cheng; Wan, Cheng; Lin, Hao‐Hsiung

doi:10.1016/j.mejo.2006.05.012

Cited by 7 publications

(5 citation statements)

References 16 publications

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“…This result can be attributed to the different surface lifetime of Sb adatom on different surface orientation planes. A previous report about the MBE-growing GaAsSb layer on misoriented substrates has demonstrated that the Sb composition of (111) B GaAsSb is higher than that of (1 0 0) GaAsSb, which means the longer surface lifetime of Sb adatom on (111) B plane [7]. In our experiment, the surface lifetime of Sb adatom may decrease as the substrate off angle increases.…”

Section: Resultssupporting

confidence: 42%

“…The epitaxy on misorientation substrate has also been used to enhance the optical properties of QW structures. In the previous work, the MBE-grown GaAsSb alloys on high-index crystallographic direction, such as (111) B-oriented substrates have been studied [7]. For the GaAsSb/GaAs QW structures grown on misoriented substrates, the room temperature photoluminescence (PL) peaks were with longer wavelengths than those of the (1 0 0)-oriented samples with the same Sb composition.…”

Section: Introductionmentioning

confidence: 99%

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Improving photoluminescence of highly strained 1.32 μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate

Wan

Chuang

et al. 2008

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 42%

Section: Introductionmentioning

confidence: 99%

Improving photoluminescence of highly strained 1.32 μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate

Wan

Chuang

et al. 2008

Journal of Crystal Growth

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“…As one of the most important narrow-bandgap ternary alloy semiconductors, GaAs 1– x Sb x has a bandgap tunable over a large range from about 870 nm (GaAs) to 1720 nm (GaSb) at room temperature, which makes it an attractive material for band structure engineering − and various optoelectronic applications, such as in optical fiber communication systems, infrared light-emitting diodes, photodetectors, lasers, ,, and heterojunction bipolar transistors . In addition, the GaAs 1– x Sb x semiconductor alloy is also a good candidate for study on spintronic devices based on GaAs. − However, the fabrication of high-quality and high Sb content GaAs 1– x Sb x films remains a challenge because there is a large lattice mismatch between the GaAs 1– x Sb x films and III–V semiconductor substrates, and the crystalline quality of the films is very sensitive to growth conditions. ,, …”

Section: Methodsmentioning

confidence: 99%

Near Full-Composition-Range High-Quality GaAs_1–xSb_x Nanowires Grown by Molecular-Beam Epitaxy

et al. 2017

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Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-tunable GaAsSb nanowires by molecular-beam epitaxy. GaAsSb nanowires with different Sb content are systematically grown by tuning the Sb and As fluxes, and the As background. We find that GaAsSb nanowires with low Sb content can be grown directly on Si(111) substrates (0 ≤ x ≤ 0.60) and GaAs nanowire stems (0 ≤ x ≤ 0.50) by tuning the Sb and As fluxes. To obtain GaAsSb nanowires with x ranging from 0.60 to 0.93, we grow the GaAsSb nanowires on GaAs nanowire stems by tuning the As background. Photoluminescence measurements confirm that the emission wavelength of the GaAsSb nanowires is tunable from 844 nm (GaAs) to 1760 nm (GaAsSb). High-resolution transmission electron microscopy images show that the grown GaAsSb nanowires have pure zinc-blende crystal structure. Room-temperature Raman spectra reveal a redshift of the optical phonons in the GaAsSb nanowires with x increasing from 0 to 0.93. Field-effect transistors based on individual GaAsSb nanowires are fabricated, and rectifying behavior is observed in devices with low Sb content, which disappears in devices with high Sb content. The successful growth of high-quality GaAsSb nanowires with near full-range bandgap tuning may speed up the development of high-performance nanowire devices based on such ternaries.

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“…This is probably induced by the temperature-enhanced desorption of N from the growth surface, as it has been theoretically predicted [22]. On the other hand, as expected from the fact that Sb has a higher sublimation energy than As [23], increasing the temperature affects substantially the incorporation of Sb [24,25]. Thus, Sb desorption has been found to increase with temperature, becoming substantial above 490°C [24].…”

Section: Resultsmentioning

confidence: 81%

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer

et al. 2014

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An extensive study on molecular beam epitaxy growth conditions of quaternary GaAsSbN as a capping layer (CL) for InAs/GaAs quantum dots (QD) was carried out. In particular, CL thickness, growth temperature, and growth rate were optimized. Problems related to the simultaneous presence of Sb and N, responsible for a significant degradation of photoluminescence (PL), are thereby solved allowing the achievement of room-temperature (RT) emission. A particularly strong improvement on the PL is obtained when the growth rate of the CL is increased. This is likely due to an improvement in the structural quality of the quaternary alloy that resulted from reduced strain and composition inhomogeneities. Nevertheless, a significant reduction of Sb and N incorporation was found when the growth rate was increased. Indeed, the incorporation of N is intrinsically limited to a maximum value of approximately 1.6% when the growth rate is at 2.0 ML s−1. Therefore, achieving RT emission and extending it somewhat beyond 1.3 μm were possible by means of a compromise among the growth conditions. This opens the possibility of exploiting the versatility on band structure engineering offered by this QD-CL structure in devices working at RT.PACS81.15.Hi (molecular beam epitaxy); 78.55.Cr (III-V semiconductors); 73.21.La (quantum dots)

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[1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxy

Cited by 7 publications

References 16 publications

Improving photoluminescence of highly strained 1.32 μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate

Improving photoluminescence of highly strained 1.32 μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate

Near Full-Composition-Range High-Quality GaAs_1–xSb_x Nanowires Grown by Molecular-Beam Epitaxy

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer

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[1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxy

Cited by 7 publications

References 16 publications

Improving photoluminescence of highly strained 1.32 μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate

Improving photoluminescence of highly strained 1.32 μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate

Near Full-Composition-Range High-Quality GaAs1–xSbx Nanowires Grown by Molecular-Beam Epitaxy

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer

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Near Full-Composition-Range High-Quality GaAs_1–xSb_x Nanowires Grown by Molecular-Beam Epitaxy