Modified metal-induced lateral crystallization using amorphous Ge∕Si layered structure

Kanno, Hiroshi; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu

doi:10.1063/1.1780595

Cited by 21 publications

(19 citation statements)

References 11 publications

(4 reference statements)

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“…Fig. 7 shows Arrhenius plots of the SiGe growth velocity of Niimprint-induced SPC (open symbols), Ni-MILC (closed symbols) [6] and conventional SPC (dashed lines) [16]. The growth velocity of the Ni-imprint-induced SPC was close to that of the conventional SPC, consequently the enhancement in growth velocity was not remarkable.…”

Section: Resultsmentioning

confidence: 85%

“…The low-temperature solid phase crystallization of a-Si has been developed using the catalytic effect of some metals [5][6][7][8][9][10][11], e.g., Au, Al, Pd, Ag, and Ni. Among them, Ni shows a significant effect.…”

Section: Introductionmentioning

confidence: 99%

“…Arrhenius plots of the SiGe growth velocity of Ni-imprint-induced SPC (open symbols), Ni-MILC (closed symbols)[6] and conventional SPC (dashed lines)[16].…”

mentioning

confidence: 99%

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Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique

Toko

Kanno

Kenjo

et al. 2008

Solid-State Electronics

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Section: Resultsmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 99%

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Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique

Toko

Kanno

Kenjo

et al. 2008

Solid-State Electronics

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“…This metal-induced lateral crystallization (MILC) has achieved poly Si with large grains ($10 mm) on insulating films. This technique has been also developed for crystallization of amorphous silicon-germanium (a-SiGe) films and a-Si/a-Ge layered structures [9,10].…”

mentioning

confidence: 99%

Directional growth in metal-induced lateral crystallization of amorphous Si under extremely high electric field

Kanno

Kenjo

Miyao

2005

Journal of Crystal Growth

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“…A third and very well-documented method of enhancing grain sizes at low temperatures is that of metal-induced crystallization (MIC) and metal-induced lateral crystallization (MILC) [54][55][56][57][58][59][60][61][62][63][64]. In both MIC and MILC, a metal (typically nickel) is brought into contact with Ge or Si and annealed at a low temperature (typically up to 5500 C for Ge).…”

Section: Low-t Grain Engineeringmentioning

confidence: 99%

Single‐Crystal Germanium Growth on Amorphous Silicon

McComber

Duan

Liu

et al. 2011

Adv Funct Materials

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The integration of photonics with electronics has emerged as a leading platform for microprocessor technology and the continuation of Moore's Law. As electronic device dimensions shrink, electronic signals encounter crippling delays and heating issues such that signal transduction across large on-chip distances becomes increasingly more difficult. However, these issues may be mitigated by the use of photonic interconnects combined with electronic devices in electronic-photonic integrated circuits (EPICs).The electronics in proposed EPIC designs perform the logic operations and shortdistance signal transmission, while photonic devices serve to transmit signals over longer lengths. However, the photonic devices are large compared to electronic devices, and thus the two types of devices would ideally exist on separate levels of the microprocessor stack in order to maximize the amount of silicon substrate available for electronic device fabrication.A CMOS-compatible back-end process for the fabrication of photonic devices is necessary to realize such a three-dimensional EPIC. Back-end processing is limited in thermal budget and does not present a single-crystal substrate for epitaxial growth, however, so high-quality crystal fabrication methods currently used for photonic device fabrication are not possible in back-end processing.This thesis presents a method for the fabrication of high-quality germanium single crystals using CMOS-compatible back-end processing. Initial work on the ultra-high vacuum chemical vapor deposition of polycrystalline germanium on amorphous silicon is presented. The deposition can be successfully performed by using a pre-growth hydrofluoric acid dip and by limiting the thickness of the amorphous silicon layer to less than 120 nm. Films deposited at temperatures of 3500 C, 450* C, and 5500 C show (110) texture, though the texture is most prevalent in growths at 450* C. Poly-Ge grown at 4500 C is successfully doped n-type in situ, and the grain size of as-grown material is enhanced by lateral growth over a barrier.Structures are fabricated for the growth of Ge confined in one dimension. The growths show faceting across large areas, in contrast to as-deposited poly-Ge, corresponding to enhanced grain sizes. Growth confinement is shown to reduce the defect density as the poly-Ge grows. When coalesced into a continuous film, the material grown from 1 D confinement exhibits a lower carrier density and lower trap density than asdeposited poly-Ge, indicating improved material quality. We measure an increased grain size from as-deposited poly-Ge to Ge grown from ID confinement.Single-crystal germanium is grown at 450' C from confinement in two dimensions. Such growths exhibit faceting across the entire crystal as well as the presence of E3 boundaries ({ I 1} twins), with many growths showing no other boundaries. These twins mediate the growth of the crystal, as they serve as the points for heterogeneous surface nucleation of adatom clusters. The twins can form after the crystal nucleates and...

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Modified metal-induced lateral crystallization using amorphous Ge∕Si layered structure

Cited by 21 publications

References 11 publications

Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique

Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique

Directional growth in metal-induced lateral crystallization of amorphous Si under extremely high electric field

Single‐Crystal Germanium Growth on Amorphous Silicon

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