Directional growth in metal-induced lateral crystallization of amorphous Si under extremely high electric field

Kanno, Hiroshi; Kenjo, Atsushi; Miyao, Masanobu

doi:10.1016/j.jcrysgro.2005.02.016

Cited by 12 publications

(7 citation statements)

References 13 publications

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“…DC electromigration in thin metallic connections is also well documented into the literature (see [17,[21][22][23][103][104][105][106][107][108]). A few metals (namely aluminum, copper, and in a lesser extent gold) have been extensively studied.…”

Section: Electromigration In Electronic Circuitsmentioning

confidence: 95%

Electromigration occurences and its effects on metallic surfaces submitted to high electromagnetic field: A novel approach to breakdown in accelerators

Antoine

Peauger

Pimpec³

2011

Nuclear Instruments and Methods in Physics Research Section A:

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Section: Electromigration In Electronic Circuitsmentioning

confidence: 95%

Electromigration occurences and its effects on metallic surfaces submitted to high electromagnetic field: A novel approach to breakdown in accelerators

Antoine

Peauger

Pimpec³

2011

Nuclear Instruments and Methods in Physics Research Section A:

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“…The hole mobility evaluated from the I D -V G character- istics is $100 cm 2 V À1 s À1 , which is of the same order as that obtained using GOI substrates. 10) These results clearly show that Schottky S/D poly-Ge TFTs are useful for the realization of system-in-displays.…”

Section: Characterization Of Nige Schottky S/d Tftsmentioning

confidence: 73%

“…[1][2][3][4][5] To develop such a materials revolution in the TFT field, we have been investigating solid-phase crystallization (SPC) techniques for polycrystalline SiGe (poly-SiGe) on insulating substrates. [6][7][8][9][10] In particular, Ge is the most promising candidate for the channel materials of TFTs, because the carrier mobility of Ge is very high, and the solid-phase crystallization (SPC) temperature of amorphous Ge (a-Ge) is lower than the softening temperature of glass substrates ($550 C). 6,11,12) However, with increasing carrier velocity, floating body effects, such as those observed in silicon-on-insulator (SOI) devices, can deteriorate the performance of TFTs.…”

Section: Introductionmentioning

confidence: 99%

Ge-Channel Thin-Film Transistor with Schottky Source/Drain Fabricated by Low-Temperature Processing

Sadoh

Kamizuru

Kenjo

et al. 2007

jjap

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The state-selective dissociation dynamics for anionic and excited neutral fragments of gaseous SiCl 4 following Cl 2p and Si 2p core-level excitations were characterized by combining measurements of the photoninduced anionic dissociation, x-ray absorption and UV/visible dispersed fluorescence. The transitions of core electrons to high Rydberg states/doubly excited states in the vicinity of both Si 2p and Cl 2p ionization thresholds of gaseous SiCl 4 lead to a remarkably enhanced production of anionic, Si − and Cl − , fragments and excited neutral atomic, Si * , fragments. This enhancement via core-level excitation near the ionization threshold of gaseous SiCl 4 is explained in terms of the contributions from the Auger decay of doubly excited states, shake-modified resonant Auger decay, or/and post-collision interaction. These complementary results provide insight into the state-selective anionic and excited neutral fragmentation of gaseous molecules via core-level excitation.

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“…In order to achieve plane growth of a-Si 1-x Ge x with high Ge fractions, we examined the application of electric fields during Ni-MILC (20,21). In this experiment, the patterned Ni films deposited on a-SiGe, schematically shown in Fig.10(a), were employed as the electrodes.…”

Section: Uniform Growth Of Sige By Electric-field Controlled Milcmentioning

confidence: 99%

Low Temperature Crystallization of a-SiGe on Insulating Films for Thin Film Transistor Application

et al. 2006

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Development of high-mobility semiconductors is strongly needed to realize high-performance thin-film transistors. To achieve this, we have been investigating low temperature solid-phase crystallization and metal-induced lateral crystallization of a-SiGe on insulating substrates. These realize uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of low temperature SiGe growth and discusses the possible application to thin-film transistors with high speed operation.

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Directional growth in metal-induced lateral crystallization of amorphous Si under extremely high electric field

Cited by 12 publications

References 13 publications

Electromigration occurences and its effects on metallic surfaces submitted to high electromagnetic field: A novel approach to breakdown in accelerators

Electromigration occurences and its effects on metallic surfaces submitted to high electromagnetic field: A novel approach to breakdown in accelerators

Ge-Channel Thin-Film Transistor with Schottky Source/Drain Fabricated by Low-Temperature Processing

Low Temperature Crystallization of a-SiGe on Insulating Films for Thin Film Transistor Application

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