Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique

Toko, Kaoru; Kanno, Hiroshi; Kenjo, Atsushi; Sadoh, Taizoh; Asano, Tanemasa; Miyao, Masanobu

doi:10.1016/j.sse.2008.05.009

Cited by 2 publications

(2 citation statements)

References 15 publications

(18 reference statements)

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“…[8] and references therein, it varies between 450 and 490 °C for Ge and between 700 and 740 °C for Si. For a-Si x Ge 1-x crystallization is reported to occur at temperatures ≥ 550 °C unless a catalityc metal is used [40,41] which was not our case. The amorphous state of our annealed samples was confirmed experimentally by TEM ( Fig.…”

Section: Methodsmentioning

confidence: 73%

Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x

Serényi

Frigeri²,

Schiller

2018

Journal of Alloys and Compounds

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Surface quality is a key issue in semiconductor structures for device applications. Typical surface defects are blisters. Here we investigate on the relationship between the activation energy of blistering and the composition x in hydrogenated amorphous a-Si x Ge 1-x by employing layers deposited by Radio Frequency sputtering. To this aim the blistering activation energy was determined by means of Arrhenius plots in several samples with different compositions, including x=0 and x=1. Each sample was submitted to heat treatment up to the temperature where the onset of blistering was observed by change of the surface reflectivity. It is found that a linear dependence of the activation energy on x similar to the Vegard's law holds. The experimental result is supported by reaction kinetics modeling. It is suggested that the key step for the formation of blisters is the scission of the SiH and GeH bonds. The related energetic reaction leading to the formation of H 2 molecules in a-Si x Ge 1-x follows a linear law as a function of the x composition similarly to the activation energy.

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Section: Methodsmentioning

confidence: 73%

Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x

Serényi

Frigeri²,

Schiller

2018

Journal of Alloys and Compounds

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show abstract

“…To realize this, over the past few decades, low-temperature growth techniques of polySi and related alloys such as poly-SiGe on insulating substrate such as glass, plastic and polymer have been widely investigated [1][2][3][4][5]. The annealing technique using excimer laser is candidate for lowtemperature growth technique of poly-Si and related alloys from amorphous phase.…”

Section: Introductionmentioning

confidence: 99%

Influence of annealing temperature and Au concentration on the electrical properties of multilayered a-Ge/Au films

Miyazaki

Takiguchi

Aono

2012

Journal of Non-Crystalline Solids

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Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique

Cited by 2 publications

References 15 publications

Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x

Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x

Influence of annealing temperature and Au concentration on the electrical properties of multilayered a-Ge/Au films

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