Modelling recombination current in polysilicon solar cell grain boundaries

The aim of this work is to study the behaviour of a silicon solar cell under the irradiation of different fluences of high-energy proton radiation (10 MeV) and under constant multispectral illumination. Many theoretical et experimental studies of the effect of irradiation (proton, gamma, electron, etc.) on solar cells have been carried out. These studies point out the effect of irradiation on the behaviour of the solar cell electrical parameters but do not explain the causes of these effects. In our study, we explain fundamentally the causes of the effects of the irradiation on the solar cells. Taking into account the empirical formula of diffusion length under the effect of high-energy particle irradiation, we established new expressions of continuity equation, photocurrent density, photovoltage, and dynamic junction velocity. Based on these equations, we studied the behaviour of some electronic and electrical parameters under proton radiation. Theoretical results showed that the defects created by the irradiation change the carrier distribution and the carrier dynamic in the bulk of the base and then influence the solar cell electrical parameters (short-circuit current, open-circuit voltage, conversion efficiency). It appears also in this study that, at low fluence, junction dynamic velocity decreases due to the presence of tunnel defects. Obtained results could lead to improve the quality of the junction of a silicon solar cell.

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“…Intrinsic Junction Recombination Velocity. The intrinsic junction recombination velocity is obtained by solving the equation as follows [17,19]:…”

Section: Expression Of Electronic and Electrical Parametersmentioning

confidence: 99%

“…The Boltzmann law leads to an expression of the photovoltage of the solar cell which depends on the charge carrier concentration at the junction. Its expression is as follows [17,19]:…”

Section: Expression Of Electronic and Electrical Parametersmentioning

confidence: 99%

Theoretical Study of Proton Radiation Influence on the Performance of a Polycrystalline Silicon Solar Cell

Serge

Zouma

Korgo

et al. 2019

International Journal of Photoenergy

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“…The bifacial polycrystalline silicon solar cell n + -p-p + , studied, is modelled as a regular array of parallelepipedic grains connected in parallel [17] [18]. Each grain has the same electronic and electrical characteristics as the solar cell and that allowed us to conduct the study on a grain and then extrapolate the results to a solar cell [19].…”

Section: Theoretical Backgroundmentioning

confidence: 99%

“…• the grain boundaries are perpendicular to the junction and their recombination velocity S gb is constant along the grain boundaries and independent of illumination up to AM 1 [20] so under AM 1.5 which is the standard spectrum for measuring the efficiency of solar cells used on the surface of the earth [21]; • the grain and by extrapolation the polycrystalline silicon solar cell have a high n-type doped emitter so that the contribution on the performance of the cell comes from the p-type base region [18];…”

Section: Theoretical Backgroundmentioning

confidence: 99%

Effect of Incidence Angle of Magnetic Field on the Performance of a Polycrystalline Silicon Solar Cell under Multispectral Illumination

Sourabié¹,

Zerbo²,

Zoungrana³

et al. 2017

SGRE

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The aim of this work is to investigate, with a three-dimensional steady-state approach, the effect of the incidence angle of a magnetic field on the performance of a polycrystalline silicon solar cell under multispectral illumination. The magneto-transport and continuity equations of excess minority carriers are solved to find the expression of the density of excess minority carriers and the related electrical parameters, such as the photocurrent density, the photovoltage and the electric power, of a grain of the polycrystalline silicon solar cell. The influence of the incidence angle of the magnetic field on the diffusion coefficient, the short-circuit photocurrent density, the open-circuit photovoltage and the electric power-photovoltage is studied. Then, the curves of the electric power-photovoltage is used to find the maximum electric power allowing to calculate, according to the incidence angle of the magnetic field, the fill factor and the conversion efficiency. The study has shown that the increase of the incidence angle of the magnetic field from 0 rad to π/2 rad, can reduce the degradation of the performance of solar cells.

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“…The photovoltage is expressed by Boltzmann law [14,15]: (11) In this expression, V T is the thermal voltage given by: V T = k B ·T/q, n o expresses the carrier concentration at thermodynamic equilibrium: ) and k B is the Boltzmann's constant.…”

Section: Expression Of Photocurrent Density and Photovoltagementioning

confidence: 99%

The Effect of Magnetic Field on the Efficiency of a Silicon Solar Cell Under an Intense Light Concentration

Zoungrana¹,

Zerbo²,

Soro³

et al. 2017

Adv. Sci. Technol. Res. J.

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This work put in evidence, magnetic field effect the electrical parameters of a silicon solar cell illuminated by an intense light concentration: external load electric power, conversion efficiency, fill factor, external optimal charge load. Due to the high photogeneration of a carrier in intense light illumination mode, in addition of magnetic field, we took into account the carrier gradient electric field in the base of the solar cell. Taking into account this electric field and the applied magnetic field in our model led to new analytical expressions of the continuity equation, the photocurrent and the photovoltage. In this work, we used the electric power curves versus junction dynamic velocity (S j ) to determine, according to magnetic field, the maximum electric power P elmax and we calculate the solar cell conversion efficiency (η). We also used the J-V characteristics to determine the solar cell short circuit density current (J cc ) and the open circuit voltage (V co ) under magnetic field and we calculate the fill factor (FF). Finally, we used simultaneously the J-V characteristics and equipower curves to determine the optimal external load resistance. The results of this study have showed that the maximum electric power and the conversion efficiency are higher than those of monofacial and bifacial silicon solar cells illuminated by conventional light but they decreased with the increase of magnetic field.

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Modelling recombination current in polysilicon solar cell grain boundaries

Cited by 14 publications

References 12 publications

Theoretical Study of Proton Radiation Influence on the Performance of a Polycrystalline Silicon Solar Cell

Theoretical Study of Proton Radiation Influence on the Performance of a Polycrystalline Silicon Solar Cell

Effect of Incidence Angle of Magnetic Field on the Performance of a Polycrystalline Silicon Solar Cell under Multispectral Illumination

The Effect of Magnetic Field on the Efficiency of a Silicon Solar Cell Under an Intense Light Concentration

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