Modelling of MOCVD Reactor: New 3D Approach

Raj, Ewa; Lisik, Zbigniew; Niedzielski, P.; Ruta, Ł.; Turczynski, M; Wang, X; Waag, A.

doi:10.1088/1742-6596/494/1/012019

Cited by 10 publications

(7 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We address the gradient in emission along the m‐plane sidewall to a gradual local change of InGaN growth conditions with distance from the masked substrate, leading to an inhomogeneous incorporation of Indium resulting in different emission wavelengths and intensities . According to recent modelling, the temperature gradient along the height of such structures is expected not to exceed a few degrees and thus it will not significantly affect the growth. Another possible origin might be due to diffusion effects in the gas phase and probably also on the sample's surface.…”

Section: Resultsmentioning

confidence: 99%

Characterization of the internal properties of InGaN/GaN core–shell LEDs

Ledig

Wang

Fündling

et al. 2015

Physica Status Solidi (a)

View full text Add to dashboard Cite

In this paper, we present the structural, optical, and electrical characterization of InGaN/GaN core-shell micro-LED structures selectively grown by metal organic vapor phase epitaxy (MOVPE) in arranged arrays. In particular we analyze the core-shell geometry of the pillars, consisting of a fivefold InGaN/GaN multiple quantum well and a p-type layer on all sidewall and top facets. Additionally we analyze the optical properties of the structure and the active region with high spatial resolution by cathodoluminescence. Electron beam induced current measurements (EBIC) are performed using an SEM based manipulator setup, giving proof of the presence of a depletion region as well as the intended doping polarity of the n-type core and a p-type shell wrapped around the whole structure. Using a p-n-p configuration also current crowding is discussed by EBIC and electroluminescence is demonstrated by measuring emission patterns from single core-shell structures.Color overlay of SE image (grey, FOV ¼ 12.7 mm) and EBIC image (red) of a cleaved core-shell LED pillar contacted by two probe tips at a substrate tilt of 308.

show abstract

Section: Resultsmentioning

confidence: 99%

Characterization of the internal properties of InGaN/GaN core–shell LEDs

Ledig

Wang

Fündling

et al. 2015

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…Based on our experience [17,35] in MOVPE reactor analysis, a suitable reactor model was prepared. For the numerical investigations presented in the study, ANSYS Fluent was used [36].…”

Section: Reaction-transport Modelmentioning

confidence: 99%

“…Furthermore, the temperature measurements in the reactor chamber are limited due to the restricted access and the expected range (e.g., 600 • C to 1200 • C in the case of GaN). As a consequence, numerical simulations of the process [14][15][16][17][18] are necessary to predict and investigate the growth conditions, and to improve the epitaxy process.…”

Section: Introductionmentioning

confidence: 99%

“…The conducted analysis showed that the reactor geometry is of crucial importance to the high uniformity of thin-film layer deposition. Subsequent studies focused on specific apparatus constructions from small laboratory size solutions, suitable for processing 3 in wafers [17,[20][21][22][23][24][25] up to big, rotating disk or planetary constructions designed for more than 40 2-in substrates [15,[26][27][28][29][30]. The researchers investigated the geometry and shape of reactor chambers [15,25,27] with special emphasis placed on the distance between the inlet and the susceptor, the gas injection systems [22,26,31,32] responsible for proper chemical species delivery, as well as the operating parameters of the growth process [15,16,29,33].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth

et al. 2021

View full text Add to dashboard Cite

The present paper focuses on the high-pressure metal-organic vapor phase epitaxy (MOVPE) upside-down vertical reactor (where the inlet of cold gases is below a hot susceptor). This study aims to investigate thermo-kinetic phenomena taking place during the GaN (gallium nitride) growth process using trimethylgallium and ammonia at a pressure of above 2 bar. High pressure accelerates the growth process, but it results in poor thickness and quality in the obtained layers; hence, understanding the factors influencing non-uniformity is crucial. The present investigations have been conducted with the aid of ANSYS Fluent finite volume method commercial software. The obtained results confirm the possibility of increasing the growth rate by more than six times through increasing the pressure from 0.5 bar to 2.5 bar. The analysis shows which zones vortexes form in. Special attention should be paid to the transitional flow within the growth zone as well as the viewport. Furthermore, the normal reactor design cannot be used under the considered conditions, even for the lower pressure value of 0.5 bar, due to high turbulences.

show abstract

“…It is worth noting that although CAD tools are commonly used in microelectronics technology to support the design of devices [25], their manufacturing processes [26][27][28][29] or the investigation of semiconductor features [30], their use as an element of measuring set-up that controls the technology process is presented here, probably for the first time. This paper presents the construction details of the Degussa furnace reactor with an additional cassette for SiC processing, which was the starting point for the creation of a numerical model of the phenomena occurring in the reactor during high-temperature processes, as well as the subsequent stages of CAD model development and verification of taken assumptions.…”

Section: Introductionmentioning

confidence: 99%

CAD Approach to Control High-Temperature Processes in SiC Technology

2022

View full text Add to dashboard Cite

Manufacturing silicon carbide semiconductor devices may require high-temperature treatment in closed graphite reactors. This makes temperature control of processed SiC substrates difficult, since their temperature cannot be measured directly. As the monitoring of the SiC sample temperature is critically important for proper process flow, an indirect method involving the use of the CAD approach has been developed. A numerical model of a furnace reactor was created on the basis of the commercial ANSYS package, allowing for the simulation of thermal fields under given heat-dissipation conditions in the modeled area and in the presence of gaseous and liquid media participating in heat exchange and transport. Obtained simulation results remain very consistent with the reference temperature measurements of selected areas of the reactor. The model acts as an accurate tool for temperature distribution verification during the high-temperature annealing of and diffusion of dopants for silicon carbide.

show abstract

Modelling of MOCVD Reactor: New 3D Approach

Cited by 10 publications

References 13 publications

Characterization of the internal properties of InGaN/GaN core–shell LEDs

Characterization of the internal properties of InGaN/GaN core–shell LEDs

Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth

CAD Approach to Control High-Temperature Processes in SiC Technology

Contact Info

Product

Resources

About