Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth

Abstract

The present paper focuses on the high-pressure metal-organic vapor phase epitaxy (MOVPE) upside-down vertical reactor (where the inlet of cold gases is below a hot susceptor). This study aims to investigate thermo-kinetic phenomena taking place during the GaN (gallium nitride) growth process using trimethylgallium and ammonia at a pressure of above 2 bar. High pressure accelerates the growth process, but it results in poor thickness and quality in the obtained layers; hence, understanding the factors influencing non-uniformity is crucial. The present investigations have been conducted with the aid of ANSYS Fluent finite volume method commercial software. The obtained results confirm the possibility of increasing the growth rate by more than six times through increasing the pressure from 0.5 bar to 2.5 bar. The analysis shows which zones vortexes form in. Special attention should be paid to the transitional flow within the growth zone as well as the viewport. Furthermore, the normal reactor design cannot be used under the considered conditions, even for the lower pressure value of 0.5 bar, due to high turbulences.

CAD Approach to Control High-Temperature Processes in SiC Technology

“…It is worth noting that although CAD tools are commonly used in microelectronics technology to support the design of devices [25], their manufacturing processes [26][27][28][29] or the investigation of semiconductor features [30], their use as an element of measuring set-up that controls the technology process is presented here, probably for the first time. This paper presents the construction details of the Degussa furnace reactor with an additional cassette for SiC processing, which was the starting point for the creation of a numerical model of the phenomena occurring in the reactor during high-temperature processes, as well as the subsequent stages of CAD model development and verification of taken assumptions.…”

Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy

“…Crystal growth technology of III-nitride semiconductors has been actively developed to fabricate optical and electronic devices [1][2][3][4][5][6] . Reactor simulators that solve for heat and mass transfer, chemical reactions, and phase transitions have played a role in these developments [7][8][9][10][11][12] . The reaction model and its kinetic parameters are key components of reactor simulators, especially for the reaction system for chemical vapor deposition.…”