Modelling of Charge Carrier Non-Isothermal Transport in Silicon and Silicon Carbide

Abstract

Extending our previously published model of charge carrier transport and mobility, a procedure for calculation of the semiconductor thermoelectric coefficients is developed. It is shown that the phonon drag strongly influences the Seebeck and Peltier coefficients even at high temperatures, up to 400 K for Si and 600 K for SiC. As a new feature, the presented model gives a possibility to investigate the influence of the electron-hole scattering on thermoelectric coefficients.A strong underestimation of non-isothermal V7-proportional current density terms in most of the semiconductor device simulators is pointed out.

Modeling of Photon Recycling in GaN-Devices

“…A more detailed study of the present model shows that actually a quite narrow energy region is effective [13] Basic comparison of GaN and GaAs (Fig. 2).…”

“…By introducing the normalized emission spectrum ρ(E) and the coefficient of internal photoeffect β(E) (i.e. the probability that absorbed photon with energy E creates an e-h pair; here β =1), the integration over E and photon emission (recombination) coordinates x′ yields the following expressions for optically homogeneous layer of thickness w [4,13,15]:…”

“…The present paper comprises our recent results on the methodology of photon recycling effect comparison in GaN and GaAs [13], on p−i−n structures drift-diffusion simulation [13], and on GaN bipolar transistor structures simulation and amplification theory development [14].…”

Influence of the Metal–Semiconductor Interface Model on Power Conservation Principle in a Simulation of Bipolar Devices

“…where Φ m is the work function for the metal in V, φ n , φ p are the quasi-Fermi potentials for electrons and holes, P n , P p are the absolute thermoelectric powers, also referred as Seebeck coefficients [19], T is the lattice temperature, E C , E V are the conduction band and valence band energies, respectively, and q is the electron charge. With the default values of fitting parameters used for the thermodynamic model,…”

“…The values are functions of the temperature and doping concentration. It is however possible to use an analytical model, where P n , P p are calculated as [2,19]:…”