Modeling of Photon Recycling in GaN-Devices

Abstract

The strength of recombination radiation reabsorption in GaN is discussed. For material comparisons a distance-dependent radiative recombination transfer function F(u) is introduced. In spite of high absorption rates of GaN, calculations predict ca. one order of magnitude higher photon recycling efficiency in GaN than in GaAs. Simulations of 2H-GaN p −i −n structures predict appearance of S-shaped forward I/V characteristics due to the generation of extra carriers in the base center. The study of GaN bipolar transistors shows that the radiative recombination will reduce the carrier lifetimes in the base and thereby restrict essentially the achievable current gains.

Impact of Phonon Drag Effect on Seebeck Coefficient in p-6H-SiC: Experiment and Simulation

“…It may be assumed that too low values of S ph in empiric ¢ and C V model is a result of including such phonons which do not take place in drag effect and too high S ph in Herring's model indicates that some additional phonon scattering mechanism are not taken into consideration. In order to improve agreement between experimental points and theoretical curve we include 4-phonon scattering process into Herring's model [11]. As one can see in Fig.…”