Modeling ultrathin dielectric breakdown on correlation of charge trap-generation to charge-to-breakdown

Apte, Pushkar P.; Saraswat, Krishna C.

doi:10.1109/relphy.1994.307845

Cited by 19 publications

(6 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…9) show the shift in J-V characteristics with position on the CHARM wafer. Tunneling current characteristic for 70 and llOA oxides indicate that for these test conditions, no net current drive for tunneling-induced damage [17] for l l O A is present in the region where the transient effects are not important.…”

Section: Ecpivaient Circuit Models Of Ion Beams Electron Sources Andmentioning

confidence: 90%

See 1 more Smart Citation

Surface charge control during high-current ion implantation: characterization with CHARM-2 sensors

Current

Lukaszek²,

Vella

et al. 1995

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

DISCLAIMERPortions of this document may be illegible in electronic image products. Images are produced from the best available original document.IIT/94, Catania, Italy, June [13][14][15][16][17] Rev 4.0Thu., Aug. 18, 1994 . AbstxactStudies of the charging effects during implantation with 9200 and 9500 tools using EEPROM-based sensors, CHARM-2, are,reported for 6OkeV As beams. . htroductionThe thinning of gate oxides for advanced MOS devices has increased the sensitivity of these oxides to excessive charge flows and potentials during exposure to ion beam processing. Tracking the intrinsic breakdown voltage of S i 0 2 as =lOMV/cm, this corresponds to a +1OV limit for gate-to-substrate potentials for lOOA oxides (Fig. 1). This sensitivity is further tightened by concern for pre-breakdown damage (generated by current flows at potentials greater than 40% of breakdown conditions) as well as charge sharing and current funneling effects of long-line gateinterconnect structures [1,2]. The reduction of intrinsic breakdown voltage has driven the development of supplemental electron sources with ever-decreasing electron energies and increased coupling to the ion beam plasma (Fig.1).Additional progress towards charge control has been limited by the lack of detailed understanding of the interact-ion of the ion beam plasma with device structures on the wafer surface [3,4]. If the ion beam is interpreted as a plasma of some complexity [5], a variety of charged species must be considered (Fig. 2). In addition t o the energetic dopant ions, the ion beam plasma contains a significant number of ''slow ions", created by collisions between the energetic dopant ions and The electron population is essentially equal t o the density of the total ion species in the regions of the beamline where the absence of acceleration fields allow for quasi-neutrality of the beam plasma. The electron energy spectra is however quite complex. Those electrons which are trapped in the ion beam column have energies of the order of the beam potential while the-energies of electrons which enter the ion beam plasma from a wafer charge control system are determined by the local potentials in the charge control device [3]. Test Structures for Surface Potential and Charge Flows: CHARM-2Device-scale sensors using EEPROM-based structures (Fig-3) f o r measurement of surface potentials.and net charge flows provide a new and detailed view of plasma conditions on the wafer surface during implantation. CHARM-2 (CHARge Monitor) devices [S-111 use large-area Al electrodes tied to the control gate of an EEPROM transistor to sense the local surface potential. Electrodes which are tied to the Si substrate through poly-Si resistors measure the net charge flux on the electrode. Voltages and currents on the wafer surface are inferred from shifts in the transistor threshold voltage after exposure to an ion beam process environment. , Many of the charge collection electrodes are connected to the Si wafer substrate through poly resistors. Low-resistance shunts are used for s...

show abstract

Section: Ecpivaient Circuit Models Of Ion Beams Electron Sources Andmentioning

confidence: 90%

“…Images are produced from the best available original document.IIT/94, Catania, Italy, June [13][14][15][16][17] Rev 4.0Thu., Aug. 18, 1994 . …”

mentioning

confidence: 99%

Surface charge control during high-current ion implantation: characterization with CHARM-2 sensors

Current

Lukaszek²,

Vella

et al. 1995

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

show abstract

“…For extremely thin oxide (~20-30 Å) in advanced processes, [18] and [19] present two models to explain the TDDB mechanism based on anode hole injection and electron trap generation. According to these models, a critical density of hole or electron traps is required to trigger oxide breakdown.…”

Section: A Time-dependent Dielectric Breakdown (Tddb)mentioning

confidence: 99%

Reliability challenges in avionics due to silicon aging

Mesgarzadeh

Saab²,

Alvandpour

2012

2012 IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits &Amp; Systems (DDECS)

View full text Add to dashboard Cite

Today's aviation systems are strongly dependent on electronics. Avionics (i.e., aviation electronics) should be highly reliable due to the nature of their applications. CMOS technology, which is widely used in the fabrication of integrated circuits, is continuously scaled to achieve higher performance and higher integration density (i.e., the wellknown Moore's law). This scaling property creates new challenges in reliability of avionics. As an example, the aging process is speeded up resulting in shorter time to wear-out. This paper investigates reliability challenges in design of avionics caused by silicon aging. It is shown that in the circuits and systems designed in modern CMOS technology, aging phenomenon have to be considered as a serious concern.

show abstract

“…The effect is called Maxwell-Wagner polarization (M-W) and causes significant current instabilities (2). Another detrimental phenomenon in modern MOS devices is charge trapping, which is observed in most high-N dielectrics either in a single or gate stack configuration (5,6,7). Both effects lead to oxide degradation in ultrathin dielectric layer subjected to high-field stress which is critical in ULSI technology.…”

Section: Introductionmentioning

confidence: 99%

Maxwell-Wagner Instabilities and Defects Generation during CVS in REO-HfO₂ Gate Stacks Grown on Germanium Based MOS Devices

Rahman¹,

Evangelou

2010

ECS Trans.

View full text Add to dashboard Cite

The Current Instabilities and defects generation during constant voltage stress (CVS) in REO-HfO2 gate stacks grown on Ge (001) substrates by molecular beam deposition are extensively studied, and we report. Due to the different conductivities of the dielectrics in gate stacks charge accumulates at the interface of bilayer and results in current decay, and this behavior can be explained by the simultaneous effects of the Maxwell-Wagner instability and dielectric relaxation. However under CVS conditions new defects are created which is evident from 'Border traps' analysis.

show abstract

Modeling ultrathin dielectric breakdown on correlation of charge trap-generation to charge-to-breakdown

Cited by 19 publications

References 19 publications

Surface charge control during high-current ion implantation: characterization with CHARM-2 sensors

Surface charge control during high-current ion implantation: characterization with CHARM-2 sensors

Reliability challenges in avionics due to silicon aging

Maxwell-Wagner Instabilities and Defects Generation during CVS in REO-HfO₂ Gate Stacks Grown on Germanium Based MOS Devices

Contact Info

Product

Resources

About

Modeling ultrathin dielectric breakdown on correlation of charge trap-generation to charge-to-breakdown

Cited by 19 publications

References 19 publications

Surface charge control during high-current ion implantation: characterization with CHARM-2 sensors

Surface charge control during high-current ion implantation: characterization with CHARM-2 sensors

Reliability challenges in avionics due to silicon aging

Maxwell-Wagner Instabilities and Defects Generation during CVS in REO-HfO2 Gate Stacks Grown on Germanium Based MOS Devices

Contact Info

Product

Resources

About

Maxwell-Wagner Instabilities and Defects Generation during CVS in REO-HfO₂ Gate Stacks Grown on Germanium Based MOS Devices