Modeling tunneling and generation mechanisms governing the nonequilibrium transient in pulsed metal–oxide–semiconductor diodes

Abstract

The transient behavior of tunnel metal-oxide-semiconductor structures, pulsed into inversion, is quantitatively described. A simple model for the measured transient currents is proposed, based on the integral form of the continuity equation, leading to an uncoupled solution of the Continuity and Poisson equations. Experimental results for structures with p-type or n-type substrates and different oxide thicknesses are fitted. A map showing the different behavior patterns in terms of surface generation velocity and oxide thickness is given.

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“…At lower voltages (lower than 3.5V approximately) tunneling occurs predominantly in the direct regime, the electrons tunnels between the semiconductor and the metal electrode. For this regime the current depends exponentially on the oxide thickness and the gate voltage [4]. Thus, an appropriate model can be used for tunneling current in this regime, for example, equation (2):…”

“…with k 0 and a being tunneling parameters which depend on the effective mass in the insulator and the barrier height [4] and d ox is the thickness of the oxide layer. This expression can be (1) and solved numerically for the gate voltage.…”