Modeling Transmission Lines on Silicon in the Frequency and Time Domains from $S$-Parameters

Sejas-Garcia, Svetlana C.; Torres‐Torres, Reydezel; Murphy‐Arteaga, Roberto S.

doi:10.1109/ted.2012.2189774

Cited by 11 publications

(5 citation statements)

References 9 publications

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“…From Equations ( 5) and ( 6), it can be concluded that the parasitic capacitance of the strip coplanar waveguide is determined by the height of the metal plate, which further affects the impedance of the strip coplanar waveguide, the insertion loss [20] and return loss [21] will be directly affected.…”

Section: Strip Coplanar Waveguide Transmission Line Modeling and Anal...mentioning

confidence: 99%

Optimization and Design of Passive Link with Single Channel 25 Gbps Based on High-Speed Backplane

Liu

Zhang

et al. 2021

Electronics

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In recent years, with the development of the communication industry, the need to use Ethernet switches to transmit big data has become more urgent, and its protocol standards are iterating towards higher return loss, wider bandwidth, lower impedance fluctuations and insertion loss. Based on the research of high-speed backplane with a single channel 25 Gbps transmission rate, a novel double grounded planar strip coplanar waveguide design is presented, which significantly improved return loss to 20 dB and reduced insertion loss, which meet the loss standard of 100GBASE-KR4. The resonant cavity model of transmission line reference plane is improved by introducing vias and the parameters of vias in the reference plane are studied to reduce the impact of resonance, which improved the transmission –1 dB bandwidth to 60 GHz. Based on equivalent circuit analysis of differential vias’ joint reverse pad, the parameters related to the differential vias are studied, the impedance fluctuation is reduced to 100 ± 3 Ω, which is 70% better than the impedance fluctuation standard (100 ± 10 Ω) of 100GBASE-KR4. After optimizing the mathematical model of strip coplanar waveguide, reference plane and differential vias, we built a simulation model of the backplane passive link which met the 100GBASE-KR4 backplane Ethernet specification. In the actual test, it was found that the optimized model can improve the link performance.

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Section: Strip Coplanar Waveguide Transmission Line Modeling and Anal...mentioning

confidence: 99%

Optimization and Design of Passive Link with Single Channel 25 Gbps Based on High-Speed Backplane

Liu

Zhang

et al. 2021

Electronics

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“…Notice in the cross section shown in figure 1 (right) that the ground-signal-ground (GSG) configuration of the structure resembles a finite-ground coplanar waveguide (FG-CPW) where the signal is guided between ground traces which are in the same metal level [20]. Therefore, when the structure of figure 2(a) is seen as a FG-CPW presenting symmetry with respect to the signal trace, it is possible to simplify the circuit in figure 2(a) to that shown in figure 2(b) [21], where:…”

Section: Model Formulationmentioning

confidence: 99%

Characterizing 10 nm node based BEOL interconnects at low-frequency regime based on a transmission-line modelling approach

Mendez-Jeronimo¹,

Vega-Gonzalez²,

Wilson³

et al. 2018

Semicond. Sci. Technol.

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The signal propagation and impedance features of back-end-of-line interconnects are analysed through the systematic processing of experimental complex impedance data. This is achieved by proposing an equivalent circuit that accounts for the distribution of resistive and capacitive elements on the considered structure. In this regard, due to the relatively long length of the test structures typically used to assess the performance of these interconnects, the corresponding phase delay and attenuation that becomes apparent under AC stimuli need to be considered. Hence, transmission line theory is applied here for maintaining the modelling approach simple but still physical. Accurate results are achieved when correlating simulated with experimental data when using the extracted model parameters.

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“…Two traditional traveling wave electrodes (TWE) are coplanar waveguides (CPW) and coplanar strip lines (CPS) [3][4][5][6]. [7,8]. Changing CPS and CPW electrode parameters allows silicon optical modulators to have variable performance.…”

Section: Introductionmentioning

confidence: 99%

“…Another method entails the creation of an equivalent electrical circuit that aligns with the physical architecture of the modulator. The utilization of an equivalent model offers significant benefits owing to its lower computational demands in comparison to FEM [8,[21][22][23]. Furthermore, it provides a valuable insight into the physical characteristics of the transmission line.…”

Section: Introductionmentioning

confidence: 99%

“…Fig.2(b)shows the relationship between the circuit and the physical device. The above constituent circuit components can be transformed into a two-port transmission line model with effective components RLGC model[8,21,22,24] as shown in Fig.2(c). The resistance, conductance, inductance, and capacitance per unit length are represented by the symbols R [Ω/m], L [H/m], G [S/m], and C [F/m], respectively.…”

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confidence: 99%

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Equivalent circuit model of the carrier-depletion-based push-pull silicon optical modulators with T-rail slow wave electrodes

Na,

Zhuang,

Xie

et al. 2023

Preprint

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The T-rail electrode has emerged as an effective solution to improve the bandwidth of the silicon optoelectronic modulator. T-rail electrodes have shown to be a successful method of increasing the silicon optoelectronic modulator's bandwidth. Engineers frequently use finite-element numerical simulations, which necessitate intricate device modeling and massive computational resources, to design and optimize T-rail electrodes. To design and optimize T-rail electrodes, engineers often rely on finite-element numerical simulations that require complex device modeling and enormous computing resources. In this paper, we present an equivalent circuit model for carrier-depletion-based push-pull silicon modulators with T-rail electrodes. The analytical solution for the bandwidth of the modulator can be derived from the equivalent circuit. The utilization of the analytical solution offers advantages in terms of memory conservation and flexibility. The values calculated by the equivalent circuit model are in excellent agreement with the numerical full-wave HFSS simulations. Hence, the proposed model can accurately and efficiently develop silicon optical modulators.

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Modeling Transmission Lines on Silicon in the Frequency and Time Domains from $S$-Parameters

Cited by 11 publications

References 9 publications

Optimization and Design of Passive Link with Single Channel 25 Gbps Based on High-Speed Backplane

Optimization and Design of Passive Link with Single Channel 25 Gbps Based on High-Speed Backplane

Characterizing 10 nm node based BEOL interconnects at low-frequency regime based on a transmission-line modelling approach

Equivalent circuit model of the carrier-depletion-based push-pull silicon optical modulators with T-rail slow wave electrodes

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