Modeling thin‐film PV devices

Burgelman, Marc; Verschraegen, Johan; Degrave, Stefaan; Nollet, Peter

doi:10.1002/pip.524

Cited by 385 publications

(222 citation statements)

References 32 publications

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“…3b) is maximized at a thickness of B300 nm, a quantity of CQD film not sufficient to absorb all incident above-bandgap solar radiation. We used the insights gained from our diffusion measurements to build a quantitative self-consistent optoelectronic model (see Methods) 41,42 . This, correlated with experimental work, permits analysis of avenues for further improvement in CQD PV performance.…”

Section: Resultsmentioning

confidence: 99%

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Engineering colloidal quantum dot solids within and beyond the mobility-invariant regime

et al. 2014

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Colloidal quantum dots are attractive materials for efficient, low-cost and facile implementation of solution-processed optoelectronic devices. Despite impressive mobilities (1-30 cm 2 V À 1 s À 1 ) reported for new classes of quantum dot solids, it is-surprisingly-the much lower-mobility (10 À 3 -10 À 2 cm 2 V À 1 s À 1 ) solids that have produced the best photovoltaic performance. Here we show that it is not mobility, but instead the average spacing among recombination centres that governs the diffusion length of charges in today's quantum dot solids. In this regime, colloidal quantum dot films do not benefit from further improvements in charge carrier mobility. We develop a device model that accurately predicts the thickness dependence and diffusion length dependence of devices. Direct diffusion length measurements suggest the solid-state ligand exchange procedure as a potential origin of the detrimental recombination centres. We then present a novel avenue for in-solution passivation with tightly bound chlorothiols that retain passivation from solution to film, achieving an 8.5% power conversion efficiency.

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Section: Resultsmentioning

confidence: 99%

“…SCAPS simulation software 41,42 was used. The software is available on contacting the software author directly.…”

Section: Discussionmentioning

confidence: 99%

Engineering colloidal quantum dot solids within and beyond the mobility-invariant regime

et al. 2014

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“…Device simulations were performed using a solar cell capacitance simulator (SCAPS). 20 The shunt resistance R sh in the dark and under illumination was derived from the slope of the J−V curve at zero voltage. 24 and lead halide perovskites 25 ), contributing to enhanced device performances due to reduced charge carrier recombination losses at grain boundaries.…”

Section: Experimental Methodsmentioning

confidence: 99%

A Two-Step Absorber Deposition Approach To Overcome Shunt Losses in Thin-Film Solar Cells: Using Tin Sulfide as a Proof-of-Concept Material System

Steinmann

Chakraborty

Rekemeyer

et al. 2016

ACS Appl. Mater. Interfaces

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As novel absorber materials are developed and screened for their photovoltaic (PV) properties, the challenge remains to reproducibly test promising candidates for high-performing PV devices. Many early-stage devices are prone to device shunting due to pinholes in the absorber layer, producing "false-negative" results. Here, we demonstrate a device engineering solution toward a robust device architecture, using a two-step absorber deposition approach. We use tin sulfide (SnS) as a test absorber material. The SnS bulk is processed at high temperature (400°C) to stimulate grain growth, followed by a much thinner, low-temperature (200°C ) absorber deposition. At a lower process temperature, the thin absorber overlayer contains significantly smaller, densely packed grains, which are likely to provide a continuous coating and fill pinholes in the underlying absorber bulk. We compare this two-step approach to the more standard approach of using a semi-insulating buffer layer directly on top of the annealed absorber bulk, and we demonstrate a more than 3.5× superior shunt resistance R sh with smaller standard error σ Rsh . Electron-beam-induced current (EBIC) measurements indicate a lower density of pinholes in the SnS absorber bulk when using the two-step absorber deposition approach. We correlate those findings to improvements in the device performance and device performance reproducibility.

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“…Photovoltaic (PV) device simulators, which compute device performance on the basis of material properties and geometry inputs, are mature and ubiquitous in industry [1][2][3][4][5][6]. In contrast, Process Simulations are less developed.…”

Section: Introductionmentioning

confidence: 99%

Building intuition of iron evolution during solar cell processing through analysis of different process models

et al. 2015

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An important aspect of Process Simulators for photovoltaics is prediction of defect evolution during device fabrication. Over the last twenty years, these tools have accelerated process optimization, and several Process Simulators for iron, a ubiquitous and deleterious impurity in silicon, have been developed. The diversity of these tools can make it difficult to build intuition about the physics governing iron behavior during processing. Thus, in one unified software environment and using self-consistent terminology, we combine and describe three of these Simulators. We vary structural defect distribution and iron precipitation equations to create eight distinct Models, which we then use to simulate different stages of processing. We find that the structural defect distribution influences the final interstitial iron concentration ([Fe,]) more strongly than the iron precipitation equations. We identify two regimes of iron behavior: (1) diffusivity-limited, in which iron evolution is kinetic ally limited and bulk [Fe,] predictions can vary by an order of magnitude or more, and (2) solubility-limited, in which iron evolution is near thermodynamic equilibrium and the Models yield similar results. This rigorous analysis provides new intuition that can inform Process Simulation, material, and process development, and it enables scientists and engineers to choose an appropriate level of Model complexity based on wafer type and quality, processing conditions, and available computation time.

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Modeling thin‐film PV devices

Cited by 385 publications

References 32 publications

Engineering colloidal quantum dot solids within and beyond the mobility-invariant regime

Engineering colloidal quantum dot solids within and beyond the mobility-invariant regime

A Two-Step Absorber Deposition Approach To Overcome Shunt Losses in Thin-Film Solar Cells: Using Tin Sulfide as a Proof-of-Concept Material System

Building intuition of iron evolution during solar cell processing through analysis of different process models

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