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Numerical modeling is increasingly used to obtain insight in to the details of the physical operation of thin-film solar cells. Over the years several modeling tools specific to thin-film PV devices have been developed. A number of these tools have reached a mature status and are available to the PV community. Some of the most commonly used programs are presented and the possibilities as well as the shortcomings are discussed. Also, for the different thin-film PV devices (CdTe, CIGS, and, to a lesser extent, amorphous silicon and nano-structured solar cells) an overview is given of modeling efforts and achievements.Three-dimensional, numerical simulation is now almost indispensable for the design of silicon devices, from discrete transistors and optoelectronic devices to large-scale integration. Highly developed programs include, e.g., tunneling, optics, heat flow and other features. Numerical simulation is routinely performed in developing

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A simple analytical theory is presented to explain the measured roll over and cross over behaviour of the IV characteristics of thin film CdTe solar cells. It involves a classical description of the CdS/CdTe junction and the CdTe/back contact structure and is extended with a new description of minority carrier current in the CdTe contact region. This extension is crucial in describing the light dependence of the forward IV curves, and hence cross over. The same model also explains the measured CV curves. It is shown that analysis of the capacitance measurement can yield additional information about the doping density of CdTe in the vicinity of the contact. A relationship between the fill factor of the solar cell and the barrier height of the back contact is derived; this relation is useful as a new, practical criterion for the quality of the back contact. The results of this simple analytical model are confirmed by full numerical calculations of the dc and ac characteristics.

Electrical transport properties of poly (3-hexylthiophene) (P3HT) (6,6)-phenyl C61-butyric acid methyl ester (PCBM) solar cells, with and without encapsulation, have been investigated and analyzed using admittance spectroscopy and capacitance voltage measurements at different temperatures. The admittance spectroscopy clearly reveals two defect states with activation energies of 53 and 100 meV, and a concentration ten times higher in the unencapsulated sample. These defects seem to have a strong effect on the charge transport and the solar cell performance when they are present with a high concentration, since they lead to a decrease of the mobility and also the short-circuit current and the efficiency. The origin of these defects has been assigned to reaction of the blend with O2 which is also known to induce p-type doping in pure P3HT. In an attempt to understand the effect of these defects on the organic solar cell performance, modeling and simulation were carried out using the effective medium layer model and gave good agreement with the measurements results.