Modeling the non-uniform distribution of interface traps

Abstract

The incorporation of total ionizing dose (TID) effects into surface-potential-based compact models requires calculating the dependence of surface potential (ψ s ) on radiation-induced defect densities. This dependence is obtained through the introduction of the oxide trapped charge (N ot ) and the interface trap (N it ) areal densities into the surface potential equation (SPE). In this work we present an approach for introducing a non-uniform energy distribution of interface traps into calculations of ψ s . The approach is verified experimentally through comparisons with capacitance vs. voltage (C-V) characteristics of metal-oxide-semiconductor (MOS) capacitors exposed to ionizing radiation.Index Terms-Total ionizing dose (TID), metal-oxidesemiconductor (MOS), interface traps, surface potential, compact model.

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“…This effect is captured in the model based on the capacitive coupling of the gate to the channel as given by , where is the quantum capacitance of the channel, is the oxide capacitance, and is the gate voltage for which the channel potential is zero (i.e., for which the source Fermi-level align with middle of the gap). The parameter allows accounting for a metal–semiconductor work function difference and for the effects of surface states (interface traps) 20 , 21 , 53 , 54 . More details of the modeling approach are provided in the supplementary information.…”

“…, where C q is the quantum capacitance of the channel, C ox is the oxide capacitance, and V 0 is the gate voltage for which the channel potential is zero (i.e., for which the source Fermi-level align with middle of the gap). The parameter V 0 allows b a 20,21,53,54 . More details of the modeling approach are provided in the supplementary information.…”