Modeling the Displacement Damage on Trigger Current of Anode-Short MOS-Controlled Thyristor

Abstract

The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current rise rate, and high blocking capability. The anode short MCT (AS-MCT) is distinguished from conventional MCT by an anode-short structure, which develops a normallyoff characteristic. As a composite structure made of metal-oxide-silicon and bipolar junction transistors, AS-MCT is susceptible to displacement damage induced by energetic radiation. The anode trigger current which denotes the latch-up of internal thyristor structure is a key parameter for AS-MCTs. From the aspects of devices physics, we propose a model to describe the displacement damage on trigger current. Our model provides an excellent fit to the experimental data of the AS-MCT samples subjected to fission neutrons with flux in the range of 3.1×10 9-5.5×10 13 cm-2. Moreover, this work shows that the high injection effect can alleviate the displacement damage of trigger current following high flux exposures.