Cut-Off Degradation of Output Current Induced by High Fluence Neutron Radiation in High-Voltage Silicon-on-Insulator Lateral Double-Diffused MOSFET

Wang, Ruidi; Qiao, Ming; Wang, Yibing; Zhou, Xin; Li, Zhaoji; Zhang, Bo

doi:10.1109/led.2021.3126842

Cited by 3 publications

(3 citation statements)

References 13 publications

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“…Chemical etching was used to reduce the thickness of the natural SiO 2 layer (between the metal and the semiconductor) and prepare the surface for the formation of metal contacts. It should be noted that this SiO 2 dielectric layer was not purposefully grown, as compared to MOSFET technology [13,19,22,30]. It still exists even after the chemical etching of the silicon samples in HF+HNO 3 acid solution.…”

Section: Methodsmentioning

confidence: 99%

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Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers

et al. 2022

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The effect of a weak magnetic field (B = 0.17 T) and X-irradiation (D < 520 Gy) on the rearrangement of the defective structure of near-surface p-type silicon layers was studied. It was established that the effect of these external fields increases the positive accumulated charge in the region of spatial charge (RSC) and in the SiO2 dielectric layer. This can be caused by both defects in the near-surface layer of the semiconductor and impurities contained in the dielectric layer, which can generate charge carriers. It was found that the near-surface layers of the barrier structures contain only one deep level in the silicon band gap, with an activation energy of Ev + 0.38 eV. This energy level corresponds to a complex of silicon interstitial atoms SiI+SiI. When X-irradiated with a dose of 520 Gy, a new level with the energy of Ev + 0.45 eV was observed. This level corresponds to a point boron radiation defect in the interstitial site (BI). These two types of defect are effective in obtaining charge carriers, and cause deterioration of the rectifier properties of the silicon barrier structures. It was established that the silicon surface is quite active, and adsorbs organic atoms and molecules from the atmosphere, forming bonds. It was shown that the effect of a magnetic field causes the decay of adsorbed complexes at the Si–SiO2 interface. The released hydrogen is captured by acceptor levels and, as a result, the concentration of more complex Si–H3 complexes increases that of O3–Si–H.

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Section: Methodsmentioning

confidence: 99%

“…However, technological operations of the manufacturing of electronic devices [17][18][19], operating under extreme external fields [20][21][22][23][24], can stimulate the creation of defect complexes based on point defects (e.g., vacancies and interstitial silicon atoms) [25][26][27] and their further interaction and clustering [28,29].…”

Section: Introductionmentioning

confidence: 99%

Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers

et al. 2022

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“…Тому за останні декілька десятиліть накопичилось значна кількість наукових публікацій присвячених дослідженню його властивостей. Технологічні операції виготовлення електронних пристроїв [1][2][3], експлуатація в екстремальних зовнішніх полях [4][5][6] можуть стимулювати створення внутрішніх дефектних комплексів на онові власних точкових дефектів (вакансій та міжвузлових атомів кремнію) [7] та їх подальшу взаємодію та кластеризацію [8].…”

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