Modeling stochastic effects of exposure/diffusion and dissolution on missing contacts

Neureuther, Andrew R.; Long, Luke; Naulleau, Patrick

doi:10.1117/12.2583860

Cited by 3 publications

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“…42) These new studies of the development of chemically amplified resists could prove important for understanding the lithography of contacts and vias. 43) More studies on the development of EUV resists will likely be useful, including those that focus on the development of non-CARs, as the limited research in this area indicates that greater capability might be attained by considering the resist development process. 44) Alternatives to tetramethyl ammonium hydroxide developers are also being considered, as they have shown potential to improve the lithographic process.…”

Section: Atoms and Moleculesmentioning

confidence: 99%

Lithography in a quantum world

Levinson¹

2023

Jpn. J. Appl. Phys.

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The conceptualization of the lithography process as captured in models was long based primarily on classical physics. It is now essential to model the lithography process at the quantum level. Photon shot noise and molecular inhomogeneity in resists lead to line-edge roughness (LER) and stochastic defects. To contain photon shot noise while maintaining good scanner throughput for EUV lithography requires very powerful light sources. Resists in the future will need to be single-component, and molecular building blocks will need to be much smaller than 0.5 nm. This precludes the long-term use of chemically amplified resists for EUV lithography, at least for minimum line/space patterns. Because the radiation chemistry of EUV resists is driven by photoelectrons and secondary electrons, the range and stochastics of these electrons needs to be considered in the design of future resists. Invention and innovation in patterning materials will be needed to a greater degree than before.

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Section: Atoms and Moleculesmentioning

confidence: 99%

Lithography in a quantum world

Levinson¹

2023

Jpn. J. Appl. Phys.

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“…It has been reported that defects of this sort are more common than simply extrapolating a CD distribution using its mean and standard deviation would predict. [14][15][16] Understanding this sort of defect formation's effect on photo-speed and yield is something that will be worked on for the next roadmap.…”

Section: Stochasticsmentioning

confidence: 99%

International Roadmap for Devices and Systems lithography roadmap

Neisser

2021

J. Micro/Nanopattern. Mats. Metro.

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Background: Planned improvements in semiconductor chip performance have historically driven improvements in lithography and this is expected to continue in the future. The International Roadmap for Devices and Systems roadmap helps the industry plan for the future. Aim:The 2021 lithography roadmap shows requirements, possible options, and challenges for the next 15 years.Results: Critical dimensions in logic chips are now small enough that stochastics, i.e., random variations in photon, molecules, and photoresist image forming processes, introduces random variations in sizes and stochastic-driven defects. As critical dimensions get smaller, stochastics becomes a bigger challenge. The roadmap projects that despite projected improvements in tools, photoresist, device design, and patterning processes, resist dose to print will still have to roughly triple over the next 10 years to maintain acceptable stochastics unless major process or chip design changes are made. This will raise patterning costs substantially. Other patterning options are under development but they also have challenges related to defects. Edge placement error (EPE) is also a challenge for future devices. Long-term, logic device requirements will drive stacked devices, and yield and process complexity will be key challenges.Conclusions: Logic devices will drive leading edge lithography. Improved extreme ultraviolet lithography is a leading candidate but other options are possible. Key short-term challenges are stochastics, EPE, and cost. Resist dose to print is expected to rise substantially as critical dimensions shrink unless substantial process innovation occurs. For the long term, the challenges will be yield and process complexity when logic devices switch to 3D scaling

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The unfolding road from dust to trust

Beiu

2022

Advances in 3OM: Opto-Mechatronics, Opto-Mechanics, and Optical Metrology

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Modeling stochastic effects of exposure/diffusion and dissolution on missing contacts

Cited by 3 publications

References 0 publications

Lithography in a quantum world

Lithography in a quantum world

International Roadmap for Devices and Systems lithography roadmap

The unfolding road from dust to trust

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