Modeling Statistical Dopant Fluctuations Effect on Threshold Voltage of Scaled JFET Devices

Saha, Samar K.

doi:10.1109/access.2016.2519039

Cited by 10 publications

(6 citation statements)

References 15 publications

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“…The finding indicates that the threshold voltage maintains a good linear relation with the ion concentration. 33 Similarly, in Figure 4a, we observe that increasing the radiation dose leads to shifting of threshold voltages to negative values. From this, it is inferred that increasing dose leads to increase in apoptosis-related activities within the cell.…”

Section: ■ Results and Discussionsupporting

confidence: 61%

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Gating a Single Cell: A Label-Free and Real-Time Measurement Method for Cellular Progression

Venkatesh

Ilyas

et al. 2020

Anal. Chem.

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There is an ever-growing need for more advanced methods to study the response of cancer cells to new therapies. To determine cancer cells' response from a cell-mortality perspective to various cancer therapies, we report a label-free and real time method to monitor the in-situ response of individual HeLa cells using a Single Cell Gated Transistor (SCGT). As a cell undergoes apoptotic cell death, it experiences changes in morphology and ion concentrations. This change is well in line with the threshold voltage of the SCGT, which has been verified by correlating the data with the cell morphologies by scanning electron microscopy and the ion-concentration analysis by ICP-MS. This SCGT could replace patch clamps to study single cell activity via direct measurement in real time. Importantly, this SCGT can be used to study the electrical response of a single cell to stimuli that leaves the membrane intact.

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Section: ■ Results and Discussionsupporting

confidence: 61%

“…A mathematical modeling of the threshold voltage with respect to the change in the ion concentration and n-channel width or depth is performed and the results are shown in Figure . The finding indicates that the threshold voltage maintains a good linear relation with the ion concentration …”

Section: Resultsmentioning

confidence: 77%

Gating a Single Cell: A Label-Free and Real-Time Measurement Method for Cellular Progression

Venkatesh

Ilyas

et al. 2020

Anal. Chem.

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“…As L1/L becomes smaller, the dopant ions under the control gate decreases, causing the influence of RDF to increase. Further, the standard deviation of VTH is inversely proportional to the square root of the channel area [23,24]. Therefore, as L1 is continuously reduced, the fluctuation of VTH increases.…”

Section: Resultsmentioning

confidence: 99%

Random Dopant Fluctuation-Induced Variability in n-Type Junctionless Dual-Metal Gate FinFETs

2019

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We investigate the effect of random dopant fluctuation (RDF)-induced variability in n-type junctionless (JL) dual-metal gate (DMG) fin field-effect transistors (FinFETs) using a 3D computer-aided design simulation. We show that the drain voltage (VDS) has a significant impact on the electrostatic integrity variability caused by RDF and is dependent on the ratio of gate lengths. The RDF-induced variability also increases as the length of control gate near the source decreases. Our simulations suggest that the proportion of the gate metal near the source to the entire gate should be greater than 0.5.

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“…V GS ≤ V TH . After providing V GS ≥ V TH , surface potential starts increasing resulting in increase in injection electron exponentially (movement of electron is from source to body in case of N-type channel and movement of electron from body to source in case of P-type channel) is seen because of increase in energy level of electrons [16][17][18][19][20][21][22].…”

Section: Restrictions Imposed By Electron Drift Characteristicsmentioning

confidence: 99%

Double Gate MOSFETs: Assessment with Single Gate MOSFETs with Channel Material Configuration, its Structure Orientation and Future Applications

Singh*,

Kumar

2020

IJITEE

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In last 3 decades or so as we have scale down the MOSFETs with single-gate to nanometer region in order to maintain the performance level high but single gate MOSFETs still continue to suffers from the interface coupling, channel orientation, channel mobility, leakage current, switching delay and latch up. Further, the additional parameters such as short channel effects (DIBL, GIDL), body effect, hot electron effect, punch through effect, surface scattering, impact ionization, subthreshold swing and volume inversion has shown result inform of increase in leakage current, decrease of inversion charge and decrease in the drive current since double-gate MOSFET came into existence, which relies on the exploration of novel higher mobility channel materials which might perform even better than current existing single gate MOSFETs. This paper compares double-gate MOSFET configuration and single-gate MOSFET configuration using different performance parameters and channel material configuration and additionally assessed different channel materials along with its structure orientation and the future applications.

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Modeling Statistical Dopant Fluctuations Effect on Threshold Voltage of Scaled JFET Devices

Cited by 10 publications

References 15 publications

Gating a Single Cell: A Label-Free and Real-Time Measurement Method for Cellular Progression

Gating a Single Cell: A Label-Free and Real-Time Measurement Method for Cellular Progression

Random Dopant Fluctuation-Induced Variability in n-Type Junctionless Dual-Metal Gate FinFETs

Double Gate MOSFETs: Assessment with Single Gate MOSFETs with Channel Material Configuration, its Structure Orientation and Future Applications

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