Modeling RF MEMS Devices

Caekenberghe, K. Van

doi:10.1109/mmm.2011.2173984

Cited by 25 publications

(20 citation statements)

References 109 publications

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“…This result is consistent with the fact that for g = 2/3 g 0 , the increase of the electrostatic force is greater than the increase of the mechanical restoring force, resulting in the collapse of the bridge to the down-state position [1]. For a fixed-fixed beam in the capacitive configuration, the pull-down voltage is given by [1,16]:…”

Section: Resultssupporting

confidence: 73%

On the electrostatic actuation of capacitive RF MEMS switches on GaAs substrate

Persano

Quaranta

Martucci

et al. 2015

Sensors and Actuators A: Physical

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Section: Resultssupporting

confidence: 73%

On the electrostatic actuation of capacitive RF MEMS switches on GaAs substrate

Persano

Quaranta

Martucci

et al. 2015

Sensors and Actuators A: Physical

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“…Capacitive shunt MEMS switches commonly employed in TMN cannot provide enough capacitance for covering applications below 10 GHz [9], [10] and require either to remove the dielectric layer under the actuating beam to form a DCcontact switch or to increase the down-state capacitance. Both approaches have an effect on an important figure of merit: the capacitance ratio, that relates the down-state and up-state capacitances.…”

Section: Requirementsmentioning

confidence: 99%

Shunt MEMS switch requirements for Tunable Matching Network at 1.9 GHz in composite substrates

Cortes

Fischer

2015

2015 German Microwave Conference

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A theoretical approach for the specification of shunt MEMS switches suitable for Tunable Matching Networks (TMN) at 1.9 GHz is presented. DC-contact fixed-fixed beam MEMS switches designed with series metal-insulator-metal (MIM) capacitors at the grounding plane of a CPW transmission line provide the basic design block for the TMN. In the down-state, the MEMS switch makes an ohmic contact with the transmission line, as consequence, the down-state capacitance of the switch is dominated by the MIM capacitors. The proper dimensioning of the MIM capacitors enables to directly increase the capacitance ratio of the switch in order to operate at frequencies below 10 GHz. Based on predefined CPW transmission line configurations on composite substrates, the optimization of the capacitance ratio of the MEMS switch can be directly related to the geometry of the CPW transmission line. 422

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“…An analytical expression for the pull-in voltage of MEMS switches has been published in [32]. When the applied potential difference between the beam and the ground plane exceeds a certain potential, the movable structure becomes unstable and collapses onto the ground plane.…”

Section: Calculation Of Pull-in Voltage For Graphene Beamsmentioning

confidence: 99%

Impact of carbon material on RF MEMS switch

Mafinejad

Zarghami

Kouzani

et al. 2013

2013 21st Iranian Conference on Electrical Engineering (ICEE)

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Carbon materials such as Graphene and carbon nano tube promise a new generation of RF NEMS devices that bring many advantages due to their very high performances such as low mass, high Young's modulus and electrical conductivity. In this paper, the properties of Graphene for RF M/NEMS applications are briefly described. We compare the mechanical behaviour of Graphene switches with metallic RF MEMS switches such as Aluminium and Gold. The analytical study and simulation results show that the actuation voltage of Al and Au switches is high (35 V) whereas the actuation voltage for the Graphene switch is low (7.7 V). Also, the switching time of Graphene switch is 3.5 ns while the switching time for metallic switches is approximately 17µs.

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Modeling RF MEMS Devices

Cited by 25 publications

References 109 publications

On the electrostatic actuation of capacitive RF MEMS switches on GaAs substrate

On the electrostatic actuation of capacitive RF MEMS switches on GaAs substrate

Shunt MEMS switch requirements for Tunable Matching Network at 1.9 GHz in composite substrates

Impact of carbon material on RF MEMS switch

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