Shunt MEMS switch requirements for Tunable Matching Network at 1.9 GHz in composite substrates

Abstract

A theoretical approach for the specification of shunt MEMS switches suitable for Tunable Matching Networks (TMN) at 1.9 GHz is presented. DC-contact fixed-fixed beam MEMS switches designed with series metal-insulator-metal (MIM) capacitors at the grounding plane of a CPW transmission line provide the basic design block for the TMN. In the down-state, the MEMS switch makes an ohmic contact with the transmission line, as consequence, the down-state capacitance of the switch is dominated by the MIM capacitors. The proper dimensioning of the MIM capacitors enables to directly increase the capacitance ratio of the switch in order to operate at frequencies below 10 GHz. Based on predefined CPW transmission line configurations on composite substrates, the optimization of the capacitance ratio of the MEMS switch can be directly related to the geometry of the CPW transmission line. 422

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“…In reference [3], a method for fault detection and diagnosis of RF MEMS resonators on transceiver boards was proposed, utilizing Lyapunov theory and neural networks to ensure continuous operation by identifying and compensating for fatigue-related faults. MEMS switches are widely acknowledged for their efficiency in applications such as fuzzy array systems and switching filters for wireless communication, owing to their low power consumption, high isolation, minimal insertion loss (typically around 0 dB up to 100 GHz for RF MEMS switches), and superior linear performance compared to diodes or FET switches [4]. Nevertheless, MEMS switches exhibit weaknesses in terms of high actuation voltage and switching time.…”