On the electrostatic actuation of capacitive RF MEMS switches on GaAs substrate

Persano, Anna; Quaranta, F.; Martucci, Maria Concetta; Siciliano, P.; Cola, A.

doi:10.1016/j.sna.2015.05.008

Cited by 35 publications

(15 citation statements)

References 17 publications

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“…Micro-electromechanical systems (MEMS) such as microbeams utilize electrostatic force actuation in order to produce deflections [1]. The simplicity of MEMS design allows for a vast range of application such as resonators [2,3], switches [4,5], and sensors [6,7]. MEMS may operate in different conditions to best suit their application.…”

Section: Introductionmentioning

confidence: 99%

Voltage–Amplitude Response of Superharmonic Resonance of Second Order of Electrostatically Actuated MEMS Cantilever Resonators

Caruntu

Botello

Reyes

et al. 2019

Journal of Computational and Nonlinear Dynamics

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This paper investigates the voltage-amplitude response of superharmonic resonance of second order (order two) of alternating current (AC) electrostatically actuated microelectromechanical system (MEMS) cantilever resonators. The resonators consist of a cantilever parallel to a ground plate and under voltage that produces hard excitations. AC frequency is near one-fourth of the natural frequency of the cantilever. The electrostatic force includes fringe effect. Two kinds of models, namely reduced-order models (ROMs), and boundary value problem (BVP) model, are developed. Methods used to solve these models are (1) method of multiple scales (MMS) for ROM using one mode of vibration, (2) continuation and bifurcation analysis for ROMs with several modes of vibration, (3) numerical integration for ROM with several modes of vibration, and (4) numerical integration for BVP model. The voltage-amplitude response shows a softening effect and three saddle-node bifurcation points. The first two bifurcation points occur at low voltage and amplitudes of 0.2 and 0.56 of the gap. The third bifurcation point occurs at higher voltage, called pull-in voltage, and amplitude of 0.44 of the gap. Pull-in occurs, (1) for voltage larger than the pull-in voltage regardless of the initial amplitude and (2) for voltage values lower than the pull-in voltage and large initial amplitudes. Pull-in does not occur at relatively small voltages and small initial amplitudes. First two bifurcation points vanish as damping increases. All bifurcation points are shifted to lower voltages as fringe increases. Pull-in voltage is not affected by the damping or detuning frequency.Keywords: superharmonic resonance of the second order, MEMS cantilever resonator, electrostatic actuation, voltage-amplitude response, method of multiple scales (MMS), reduced-order model (ROM), boundary value problem (BVP), fringe effect

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Section: Introductionmentioning

confidence: 99%

Voltage–Amplitude Response of Superharmonic Resonance of Second Order of Electrostatically Actuated MEMS Cantilever Resonators

Caruntu

Botello

Reyes

et al. 2019

Journal of Computational and Nonlinear Dynamics

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“…NEM switch actuation can be done using different methods like electrostatic [24] [25], thermal [26], piezoelectric [27] and magnetic [28]. But electrostatic actuation is the most favourable actuation mechanism as it requires low power consumption, small electrode size and low switching time.…”

Section: Introductionmentioning

confidence: 99%

Finite Element Analysis of Graphene Oxide Based Nanoelectromechanical Capacitive Switch

Chaudhary¹,

Mudimela²

2019

Preprint

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The present work deals with finite element analysis (FEA) of a novel configuration of double clamped nanoelectromechanical (NEM) capacitive switch. Graphene oxide (GO), a graphene derivative has been used as suspended beam material in NEM switch for the first time. In the proposed work, GO is used as dielectric material having negative Poisson’s ratio value. The variation in capacitance has observed as the beam is pulled down by the actuating electrode. Analysis of pull-in voltage and von Mises stress are done using COMSOL Multiphysics, for standard and perforated GO NEM switch structures. The actuation voltage of 5.4 V for standard beam structure and 3.35 V for perforated beam structure have been achieved for the beam length of 1µm and width of 0.3 µm. The actuation voltage and von Mises stress value have reduced by making perforations in the beam. The comparative analysis of graphene and GO NEM switches have also been done in terms of von Mises stress to ensure the mechanical reliability. The von Mises stress values for GO NEM switch and graphene NEM switch are 500 MPa and 4.8 GPa respectively. This lesser value of von Mises stress in GO NEM switch makes it a good choice as beam material. The capacitive switch is demonstrated for standard and perforated beam structures. The variation in capacitance has observed as the beam is pulled down by the actuating electrode and at actuation voltage, the maximum value of capacitance obtained is 0.9403 pF.

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“…The MEMS component is characterized by the presence of suspended membranes of different geometry (beams, cantilevers, bridges, etc. ), which allow the obtaining of a unique and very complex functionality [1]. The RF MEMS is used to replace the classical switch based on semiconductors in order to obtain a better RF performance [2].…”

Section: Introductionmentioning

confidence: 99%