Modeling of suppressed dopant activation in boron- and BF2-implanted silicon

Kinoshita, Hiroyuki; Huang, T. H.; Kwong, Dim‐Lee

doi:10.1063/1.356525

Cited by 8 publications

(3 citation statements)

References 9 publications

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“…The reduced number of parameters should also make it easier to incorporate new effects that occur as junctions are scaled. Several such approaches have been tried [71][72][73][74][75] and were the first in many cases to be useful for unusual diffusion phenomena. [75][76][77] Although it might be expected that this method should be the industry workhorse, in practice this approach is used seldomly, and little research on it is being performed.…”

Section: Analytical Modeling Approachesmentioning

confidence: 99%

Ion beams in silicon processing and characterization

Chason

Picraux

Poate

et al. 1997

Journal of Applied Physics

262

106

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General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for two-dimensional characterization remain. The breadth of ion beams in the semiconductor industry is illustrated by the successful use of focused beams for machining and repair, and the development of ion-based lithographic systems. This suite of ion beam processing, modeling, and analysis techniques will be explored both from the perspective of the emerging science issues and from the technological challenges.

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Section: Analytical Modeling Approachesmentioning

confidence: 99%

Ion beams in silicon processing and characterization

Chason

Picraux

Poate

et al. 1997

Journal of Applied Physics

262

106

View full text Add to dashboard Cite

show abstract

“…[17][18][19][20] There are several reports concerning the lowtemperature activation by MWA of the amorphous layer formed by implantation of the heavy element As or P, and BF 2 or B using pre-amorphization by Si or germanium (Ge) implantation. [21][22][23] According to these reports, in the case of a single-crystal silicon substrate, it is shown that microwave absorption can locally occur in an amorphous layer formed by ion implantation.…”

Section: Introductionmentioning

confidence: 99%

Boron diffusion layer formation using Ge cryogenic implantation with low-temperature microwave annealing

Murakoshi

Harada

Miyano

et al. 2016

Jpn. J. Appl. Phys.

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It is shown that a low-sheet-resistance p-type diffusion layer with a small diffusion depth can be fabricated efficiently by cryogenic boron and germanium implantation combined with low-temperature (400 °C) microwave annealing. Compared with the conventional annealing at 1000 °C, a much smaller diffusion depth is obtained at the same sheet resistance. The low sheet resistance at 400 °C is due to microwave absorption in the surface amorphous layer, which is formed by cryogenic germanium implantation. However, the pn junction leakage was worse than that in conventional annealing, because crystal defects remain near the amorphous/crystal interface after microwave annealing. It is found that the pn junction leakage is improved greatly by cryogenic germanium implantation. These results show that a suitable combination of cryogenic implantation and microwave annealing is very promising for p-type diffusion layer technology.

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“…This phenomenon may be accompanied by increasing the sheet resistance and by suppressing the thickness of the carrier concentration profile. 26,29 The sheet resistance after annealing at temperatures corresponding to the range of reverse annealing was investigated by many authors; however, a carrier profile has not been adequately explored.…”

Section: Introductionmentioning

confidence: 99%

Harnessing reverse annealing phenomenon for shallow p-n junction formation

Krasnobaev

Cuomo

Vyletalina

1997

Journal of Applied Physics

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Monocrystalline silicon was implanted with 60 keV fluorine and 20 keV boron ions and annealed. Carrier profile, fluorine and boron redistribution, and the parameters of p+-n junctions were investigated. In ion implanted Si two specific regions were observed in which peculiarities in carrier concentration, resistivity, and F atoms redistribution occurred. It was reasoned that the “under-surface” specific region is enriched with vacancy-type defects while the “amorphous/crystalline (a/c) interface” region is enriched with interstitial type defects. After annealing at a temperature corresponding to the reverse annealing phenomenon, boron atoms were activated in the “under-surface” and deactivated in the “a/c interface” region. The possibility of PMOS transistor fabrication with ultrashallow p+-n junction (60 nm) and low leakage current by F++B+ implantation and low temperature (600–700) °C annealing by using this phenomenon was demonstrated.

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Modeling of suppressed dopant activation in boron- and BF2-implanted silicon

Cited by 8 publications

References 9 publications

Ion beams in silicon processing and characterization

Ion beams in silicon processing and characterization

Boron diffusion layer formation using Ge cryogenic implantation with low-temperature microwave annealing

Harnessing reverse annealing phenomenon for shallow p-n junction formation

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