Modeling of SILC based on electron and hole tunneling. I. Transient effects

Ielmini, Daniele; Spinelli, A.S.; Rigamonti, M.; Lacaita, A.L.

doi:10.1109/16.842971

Cited by 76 publications

(45 citation statements)

References 40 publications

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“…Physical models describing the oxide degradation mechanisms and defects effects on performances are growing in importance in modern nanoscale technologies [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model

Garetto

Randriamihaja

Zaka

et al. 2012

Solid-State Electronics

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“…Physical models describing the oxide degradation mechanisms and defects effects on performances are growing in importance in modern nanoscale technologies [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model

Garetto

Randriamihaja

Zaka

et al. 2012

Solid-State Electronics

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“…18,19 The affected dielectrics were typically highquality thermal oxides with very low trap densities, 20,21 however, the SILC effect has also been observed in PECVD oxides. 22 The physical mechanism of the transient SILC effect has been modeled as the charging and discharging of border traps located within a few nm of metal-dielectric interfaces.…”

mentioning

confidence: 99%

“…22 The physical mechanism of the transient SILC effect has been modeled as the charging and discharging of border traps located within a few nm of metal-dielectric interfaces. 20,21 The border traps are present in the as-grown films and can also be generated during high field stress of the dielectric. 21 To verify that the transient SILC effect is also present in the MEMS devices and affects device operation, a simple model is proposed to explain the DV PI measured in our MEMS devices at low electric fields.…”

mentioning

confidence: 99%

“…20,21 The border traps are present in the as-grown films and can also be generated during high field stress of the dielectric. 21 To verify that the transient SILC effect is also present in the MEMS devices and affects device operation, a simple model is proposed to explain the DV PI measured in our MEMS devices at low electric fields. During the charging phase, we assume that no charge is trapped near the top metal-dielectric interface due to rough contact between the two materials, where fewer contact points limit the possibility for charge exchange.…”

mentioning

confidence: 99%

“…19 For instance, it was shown that the exponent changes after a high-field (>5 MV/cm) stress which causes additional traps to be generated in the dielectric. 21 Given that our devices are not exposed to such high field stresses ( 3 MV/cm) and that repeated measurements on MIM and MEMS devices have shown little change in the power-law exponent with charging bias, polarity, or temperature, we conclude that no new traps are generated in the oxide and that the transient current behavior and changes in pull-in voltage are due to the charging and discharging of existing border traps located close to the bottom metal dielectric interface. The charging and discharging of the border traps have been explained by both elastic 18,19 and inelastic tunneling processes.…”

mentioning

confidence: 99%

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Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches

Ryan

Olszewski

Houlihan

et al. 2015

Applied Physics Letters

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Dielectric charging at low electric fields is characterized on radio-frequency microelectromechanical systems (RF MEMS) capacitive switches. The dielectric under investigation is silicon dioxide deposited by plasma enhanced chemical vapor deposition. The switch membrane is fabricated using a metal alloy which is shown to be mechanically robust. In the absence of mechanical degradation, these capacitive switches are appropriate test structures for the study of dielectric charging in MEMS devices. Monitoring the shift and recovery of device capacitance-voltage characteristics revealed the presence of a charging mechanism which takes place across the bottom metal-dielectric interface. Current measurements on metal-insulator-metal devices confirmed the presence of interfacial charging and discharging transient currents. The field-and temperature-dependence of these currents is the same as the well-known transient stress-induced leakage current (SILC) observed in flash memory devices. A simple model was created based on established transient SILC theory which accurately fits the measured data and reveals that charge exchange at the bottom metal-dielectric interface is responsible for charging currents and pull-in voltage changes in these MEMS devices. (C) 2015 AIP Publishing LLC

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